发明申请
- 专利标题： Semiconductor Wafer with Reduced Thickness Variation and Method for Fabricating Same
- 专利标题（中）： 具有降低厚度变化的半导体晶片及其制造方法
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申请号： US13154360申请日： 2011-06-06
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公开(公告)号： US20120306072A1公开(公告)日： 2012-12-06
- 发明人: Rupert Burbidge , David Paul Jones , Amarjit Dhadda , Robert Montgomery
- 申请人： Rupert Burbidge , David Paul Jones , Amarjit Dhadda , Robert Montgomery
- 申请人地址： US CA EL SEGUNDO
- 专利权人： INTERNATIONAL RECTIFIER CORPORATION
- 当前专利权人： INTERNATIONAL RECTIFIER CORPORATION
- 当前专利权人地址： US CA EL SEGUNDO
- 主分类号： H01L23/488
- IPC分类号： H01L23/488 ; H01L21/60
摘要：
According to one embodiment, a semiconductor wafer comprises a plurality of solder bumps for providing device contacts formed over a functional region of the semiconductor wafer, and one or more support rings surrounding the functional region. The one or more support rings and the plurality of solder bumps are formed so as to have substantially matching heights. The presence of the one or more support rings causes the semiconductor wafer to have a substantially uniform thickness in the functional region after a thinning process is performed on the semiconductor wafer. A method for fabricating the semiconductor wafer comprises forming the plurality of solder bumps over the functional region, and forming the one or more support rings surrounding the functional region before performing the thinning process on the semiconductor wafer.
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