公开(公告)号：US08987898B2

公开(公告)日：2015-03-24

申请号：US13154360

申请日：2011-06-06

申请人： Rupert Burbidge ,  David Paul Jones ,  Amarjit Dhadda ,  Robert Montgomery

发明人： Rupert Burbidge ,  David Paul Jones ,  Amarjit Dhadda ,  Robert Montgomery

IPC分类号： H01L23/488 ,  H01L21/304 ,  H01L21/683

CPC分类号： H01L21/304 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor wafer comprises a plurality of solder bumps for providing device contacts formed over a functional region of the semiconductor wafer, and one or more support rings surrounding the functional region. The one or more support rings and the plurality of solder bumps are formed so as to have substantially matching heights. The presence of the one or more support rings causes the semiconductor wafer to have a substantially uniform thickness in the functional region after a thinning process is performed on the semiconductor wafer. A method for fabricating the semiconductor wafer comprises forming the plurality of solder bumps over the functional region, and forming the one or more support rings surrounding the functional region before performing the thinning process on the semiconductor wafer.

摘要翻译： 根据一个实施例，半导体晶片包括用于提供形成在半导体晶片的功能区域上的器件触点的多个焊料凸块和围绕功能区域的一个或多个支撑环。 一个或多个支撑环和多个焊料凸块被形成为具有基本匹配的高度。 一个或多个支撑环的存在使得半导体晶片在半导体晶片上执行变薄处理之后，在功能区域中具有基本均匀的厚度。 制造半导体晶片的方法包括在功能区域之上形成多个焊料凸块，以及在对半导体晶片进行稀化处理之前形成围绕功能区域的一个或多个支撑环。

公开(公告)号：US20120306072A1

公开(公告)日：2012-12-06

申请号：US13154360

申请日：2011-06-06

申请人： Rupert Burbidge ,  David Paul Jones ,  Amarjit Dhadda ,  Robert Montgomery

发明人： Rupert Burbidge ,  David Paul Jones ,  Amarjit Dhadda ,  Robert Montgomery

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L21/304 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor wafer comprises a plurality of solder bumps for providing device contacts formed over a functional region of the semiconductor wafer, and one or more support rings surrounding the functional region. The one or more support rings and the plurality of solder bumps are formed so as to have substantially matching heights. The presence of the one or more support rings causes the semiconductor wafer to have a substantially uniform thickness in the functional region after a thinning process is performed on the semiconductor wafer. A method for fabricating the semiconductor wafer comprises forming the plurality of solder bumps over the functional region, and forming the one or more support rings surrounding the functional region before performing the thinning process on the semiconductor wafer.

摘要翻译： 根据一个实施例，半导体晶片包括用于提供形成在半导体晶片的功能区域上的器件触点的多个焊料凸块和围绕功能区域的一个或多个支撑环。 一个或多个支撑环和多个焊料凸块被形成为具有基本匹配的高度。 一个或多个支撑环的存在使得半导体晶片在半导体晶片上执行变薄处理之后，在功能区域中具有基本均匀的厚度。 制造半导体晶片的方法包括在功能区域之上形成多个焊料凸块，以及在对半导体晶片进行稀化处理之前形成围绕功能区域的一个或多个支撑环。

公开(公告)号：US08791525B2

公开(公告)日：2014-07-29

申请号：US12036718

申请日：2008-02-25

申请人： Robert Montgomery ,  Hugo Burke ,  Philip Parsonage ,  Susan Johns ,  David Paul Jones

发明人： Robert Montgomery ,  Hugo Burke ,  Philip Parsonage ,  Susan Johns ,  David Paul Jones

IPC分类号： H01L29/76

CPC分类号： H01L24/11 ,  H01L21/56 ,  H01L24/02 ,  H01L24/10 ,  H01L24/13 ,  H01L29/41775 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2224/0401 ,  H01L2224/11019 ,  H01L2224/11466 ,  H01L2224/11831 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/05494 ,  H01L2924/13091 ,  H01L2924/00

摘要： A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.

摘要翻译： 一种功率半导体器件及其制造方法，其包括在其有源区上的薄金属层和厚金属层的堆叠。

公开(公告)号：US20090212435A1

公开(公告)日：2009-08-27

申请号：US12036718

申请日：2008-02-25

申请人： Robert Montgomery ,  Hugo Burke ,  Philip Parsonage ,  Susan Johns ,  David Paul Jones

发明人： Robert Montgomery ,  Hugo Burke ,  Philip Parsonage ,  Susan Johns ,  David Paul Jones

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L24/11 ,  H01L21/56 ,  H01L24/02 ,  H01L24/10 ,  H01L24/13 ,  H01L29/41775 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2224/0401 ,  H01L2224/11019 ,  H01L2224/11466 ,  H01L2224/11831 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/05494 ,  H01L2924/13091 ,  H01L2924/00

摘要： A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.

摘要翻译： 一种功率半导体器件及其制造方法，其包括在其有源区上的薄金属层和厚金属层的堆叠。

公开(公告)号：US07423317B2

公开(公告)日：2008-09-09

申请号：US11491743

申请日：2006-07-24

申请人： Hugo R. G. Burke ,  David Paul Jones ,  Ling Ma ,  Robert Montgomery

发明人： Hugo R. G. Burke ,  David Paul Jones ,  Ling Ma ,  Robert Montgomery

IPC分类号： H01L29/739

CPC分类号： H01L29/7813 ,  H01L21/2815 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66734

摘要： A power semiconductor device which includes gate liners extending along gate insulation liners and an insulation block spacing the two gate liners.

摘要翻译： 一种功率半导体器件，其包括沿栅极绝缘衬垫延伸的栅极衬垫和间隔两个栅极衬垫的绝缘块。

公开(公告)号：US08153464B2

公开(公告)日：2012-04-10

申请号：US11582756

申请日：2006-10-18

申请人： Robert Montgomery

发明人： Robert Montgomery

IPC分类号： H01L21/00

CPC分类号： H01L21/78

摘要： A method of singulating a semiconductor die from a wafer is provided. The method includes etching or cutting several trenches into the wafer from a front surface of the wafer, such that each trench extends along an entire side of the die; depositing a passivation layer into the trenches to form a passivation plug on at least a bottom of the trenches to protect the dies and immobilize them during singulation; and forming a rigid carrier layer or plate at the first side of the wafer to secure the dies. The wafer is then ground from the back side to expose the bottom of each trench, a metal layer is formed on the back surface of the wafer; dicing tape is added, the carrier layer is removed, and the die is separated from the wafer by laser cutting or by flexing the tape.

摘要翻译： 提供了一种从晶片上分离半导体管芯的方法。 该方法包括从晶片的前表面蚀刻或切割晶片中的多个沟槽，使得每个沟槽沿模具的整个侧面延伸; 将钝化层沉积到所述沟槽中以在所述沟槽的至少底部上形成钝化塞，以保护所述管芯并在分割过程中将其固定; 以及在所述晶片的第一侧上形成刚性载体层或板以固定所述模具。 然后将晶片从后侧研磨以暴露每个沟槽的底部，在晶片的背面上形成金属层; 加入切割胶带，除去载体层，通过激光切割或通过使胶带弯曲将模具与晶片分离。

公开(公告)号：US20120003670A1

公开(公告)日：2012-01-05

申请号：US13153105

申请日：2011-06-03

申请人： Robert Montgomery

发明人： Robert Montgomery

IPC分类号： G01N33/566 ,  C12Q1/56 ,  C07K14/705

CPC分类号： G01N33/86 ,  C07K14/745 ,  G01N33/5008 ,  G01N33/554 ,  G01N2333/47 ,  G01N2333/705 ,  G01N2333/755 ,  G01N2800/224

摘要： Methods and kits for measuring levels of von Willebrand factor function in a sample without using a platelet aggregation agonist, such as ristocetin, comprising recombinant glycoprotein Ibα having at least two of a G233V, D235Y and M239V mutations and an agent to detect a complex between the recombinant glycoprotein Ibα and von Willebrand factor.

摘要翻译： 用于测量样品中von Willebrand因子功能水平的方法和试剂盒，不使用血小板聚集激动剂如瑞斯他汀，其包含具有G233V，D235Y和M239V突变中的至少两个的重组糖蛋白Ibα和检测其中的复合物 重组糖蛋白Ibα和von Willebrand因子。

公开(公告)号：US20090142779A1

公开(公告)日：2009-06-04

申请号：US12197057

申请日：2008-08-22

申请人： Robert Montgomery

发明人： Robert Montgomery

IPC分类号： G01N33/53

CPC分类号： G01N33/86 ,  C07K14/745 ,  G01N33/5008 ,  G01N33/554 ,  G01N2333/47 ,  G01N2333/705 ,  G01N2333/755 ,  G01N2800/224

摘要： Methods and kits for measuring levels of von Willebrand factor function in a sample without using a platelet aggregation agonist, such as ristocetin, comprising recombinant glycoprotein Ibα having at least two of a G233V, D235Y and M239V mutations and an agent to detect a complex between the recombinant glycoprotein Ibα and von Willebrand factor.

摘要翻译： 用于测量样品中von Willebrand因子功能水平的方法和试剂盒，不使用血小板聚集激动剂如瑞斯他汀，其包含具有至少两个G233V，D235Y和M239V突变的重组糖蛋白Ibalpha，以及用于检测 重组糖蛋白Ibalpha和von Willebrand因子。

公开(公告)号：US20070108575A1

公开(公告)日：2007-05-17

申请号：US11592407

申请日：2006-11-03

申请人： Robert Montgomery

发明人： Robert Montgomery

IPC分类号： H01L23/02

CPC分类号： H01L25/074 ,  H01L23/13 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/492 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/73153 ,  H01L2224/73253 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/0665 ,  H01L2224/48 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A semiconductor package that includes at least two semiconductor devices that are coupled to one another through a conductive clip.

摘要翻译： 一种半导体封装，其包括通过导电夹子彼此耦合的至少两个半导体器件。

公开(公告)号：US20070023829A1

公开(公告)日：2007-02-01

申请号：US11491743

申请日：2006-07-24

申请人： Hugo Burke ,  David Jones ,  Ling Ma ,  Robert Montgomery

发明人： Hugo Burke ,  David Jones ,  Ling Ma ,  Robert Montgomery

IPC分类号： H01L29/94 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/2815 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66734

摘要： A power semiconductor device which includes gate liners extending along gate insulation liners and an insulation block spacing the two gate liners.

摘要翻译： 一种功率半导体器件，其包括沿栅极绝缘衬垫延伸的栅极衬垫和间隔两个栅极衬垫的绝缘块。