发明申请
- 专利标题： MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME
- 专利标题（中）： 用于形成半导体基板的钝化膜，用于半导体基板的钝化膜及其制造方法的材料和光电晶体元件及其制造方法
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申请号： US13480549申请日： 2012-05-25
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公开(公告)号： US20120313199A1公开(公告)日： 2012-12-13
- 发明人: Akihiro Orita , Masato Yoshida , Takeshi Nojiri , Yoichi Machii , Mitsunori Iwamuro , Shuchiro Adachi , Tetsuya Sato , Toru Tanaka
- 申请人： Akihiro Orita , Masato Yoshida , Takeshi Nojiri , Yoichi Machii , Mitsunori Iwamuro , Shuchiro Adachi , Tetsuya Sato , Toru Tanaka
- 专利权人： HITACHI CHEMICAL COMPANY, LTD.
- 当前专利权人： HITACHI CHEMICAL COMPANY, LTD.
- 优先权： JP2011-118493 20110526; JP2011-118494 20110526; JP2011-141068 20110624; JP2012-055809 20120313
- 主分类号： C09D127/12
- IPC分类号： C09D127/12 ; H01L21/312 ; H01L31/0216 ; H01L31/18 ; C08K5/05 ; C09D181/06 ; C08K3/22 ; C08K3/34 ; C08K3/28 ; C08K5/5415 ; H01L29/06 ; C09D125/18
摘要：
The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
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