公开(公告)号：US20120313199A1

公开(公告)日：2012-12-13

申请号：US13480549

申请日：2012-05-25

申请人： Akihiro Orita ,  Masato Yoshida ,  Takeshi Nojiri ,  Yoichi Machii ,  Mitsunori Iwamuro ,  Shuchiro Adachi ,  Tetsuya Sato ,  Toru Tanaka

发明人： Akihiro Orita ,  Masato Yoshida ,  Takeshi Nojiri ,  Yoichi Machii ,  Mitsunori Iwamuro ,  Shuchiro Adachi ,  Tetsuya Sato ,  Toru Tanaka

IPC分类号： C09D127/12 ,  H01L21/312 ,  H01L31/0216 ,  H01L31/18 ,  C08K5/05 ,  C09D181/06 ,  C08K3/22 ,  C08K3/34 ,  C08K3/28 ,  C08K5/5415 ,  H01L29/06 ,  C09D125/18

CPC分类号： H01L31/1868 ,  B82Y10/00 ,  C08J5/24 ,  C08J2363/00 ,  C08J2425/08 ,  C08J2433/24 ,  C08K3/22 ,  C08K3/28 ,  C08K3/34 ,  C08K5/05 ,  C09D127/18 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/30604 ,  H01L23/293 ,  H01L23/3171 ,  H01L31/02168 ,  H01L31/068 ,  H01L31/1804 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/5012 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

摘要翻译： 本发明提供一种用于形成用于半导体衬底的钝化膜的材料。 该材料包括具有阴离子基团或阳离子基团的高分子化合物。

公开(公告)号：US08748877B2

公开(公告)日：2014-06-10

申请号：US13480549

申请日：2012-05-25

申请人： Akihiro Orita ,  Masato Yoshida ,  Takeshi Nojiri ,  Yoichi Machii ,  Mitsunori Iwamuro ,  Shuichiro Adachi ,  Tetsuya Sato ,  Toru Tanaka

发明人： Akihiro Orita ,  Masato Yoshida ,  Takeshi Nojiri ,  Yoichi Machii ,  Mitsunori Iwamuro ,  Shuichiro Adachi ,  Tetsuya Sato ,  Toru Tanaka

IPC分类号： H01L35/24 ,  H01L51/05 ,  H01L51/00 ,  H01L51/50 ,  B82Y10/00

CPC分类号： H01L31/1868 ,  B82Y10/00 ,  C08J5/24 ,  C08J2363/00 ,  C08J2425/08 ,  C08J2433/24 ,  C08K3/22 ,  C08K3/28 ,  C08K3/34 ,  C08K5/05 ,  C09D127/18 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/30604 ,  H01L23/293 ,  H01L23/3171 ,  H01L31/02168 ,  H01L31/068 ,  H01L31/1804 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/5012 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

摘要翻译： 本发明提供一种用于形成用于半导体衬底的钝化膜的材料。 该材料包括具有阴离子基团或阳离子基团的高分子化合物。

公开(公告)号：US20150099352A1

公开(公告)日：2015-04-09

申请号：US14233704

申请日：2012-07-17

申请人： Yoichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Mitsunori Iwamuro ,  Akihiro Orita ,  Shuichiro Adachi ,  Tetsuya Saito

发明人： Yoichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Mitsunori Iwamuro ,  Akihiro Orita ,  Shuichiro Adachi ,  Tetsuya Saito

IPC分类号： H01L21/225 ,  H01L21/22

CPC分类号： H01L21/2255 ,  H01L21/2225 ,  H01L31/022425 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： A composition for forming an n-type diffusion layer includes a glass powder containing P2O5, SiO2 and CaO and a dispersion medium. An n-type diffusion layer and a photovoltaic cell element having an n-type diffusion layer are produced by applying the composition for forming an n-type diffusion layer on a semiconductor substrate and by subjecting the substrate to a thermal diffusion treatment.

摘要翻译： 用于形成n型扩散层的组合物包括含有P 2 O 5，SiO 2和CaO的玻璃粉末和分散介质。 通过在半导体衬底上涂覆用于形成n型扩散层的组合物，并对衬底进行热扩散处理，制造n型扩散层和具有n型扩散层的光伏电池元件。

公开(公告)号：US20130078759A1

公开(公告)日：2013-03-28

申请号：US13642525

申请日：2011-04-22

申请人： Yoichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuichiro Adachi ,  Tetsuya Sato ,  Keiko Kizawa

发明人： Yoichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuichiro Adachi ,  Tetsuya Sato ,  Keiko Kizawa

IPC分类号： H01L31/18 ,  H01L21/04

CPC分类号： H01L31/0288 ,  C03C3/097 ,  C03C8/18 ,  H01L21/2225 ,  H01L21/2255 ,  H01L31/022425 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

公开(公告)号：US20130071968A1

公开(公告)日：2013-03-21

申请号：US13642526

申请日：2011-04-22

申请人： Yoichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuichiro Adachi ,  Tetsuya Sato ,  Keiko Kizawa

发明人： Yoichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuichiro Adachi ,  Tetsuya Sato ,  Keiko Kizawa

IPC分类号： H01B1/08 ,  H01B1/02 ,  H01L31/0224

CPC分类号： H01L31/1864 ,  C03C8/16 ,  C03C8/18 ,  H01L21/2225 ,  H01L21/2255 ,  H01L31/022425 ,  H01L31/032 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

公开(公告)号：US20130025669A1

公开(公告)日：2013-01-31

申请号：US13556850

申请日：2012-07-24

申请人： Tetsuya SATO ,  Masato Yoshida ,  Takeshi Nojiri ,  Youichi Machii ,  Mitsunori Iwamuro ,  Akihiro Orita

发明人： Tetsuya SATO ,  Masato Yoshida ,  Takeshi Nojiri ,  Youichi Machii ,  Mitsunori Iwamuro ,  Akihiro Orita

IPC分类号： H01L31/0236 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention provides a photovoltaic cell substrate that is a semiconductor substrate comprising an n-type diffusion layer, an n+-type diffusion layer having a higher n-type impurity concentration than the n-type diffusion layer, and a concave portion at a surface of the n+-type diffusion layer.

摘要翻译： 本发明提供一种光电池基板，其是包括n型扩散层，n型杂质浓度高于n型扩散层的n +型扩散层的半导体基板，以及在n型扩散层表面的凹部 n +型扩散层。

公开(公告)号：US20110212564A1

公开(公告)日：2011-09-01

申请号：US13013595

申请日：2011-01-25

申请人： YOUICHI MACHII ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuuichirou Adachi ,  Akihiro Orita ,  Tetsuya Sato ,  Keiko Kizawa

发明人： YOUICHI MACHII ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuuichirou Adachi ,  Akihiro Orita ,  Tetsuya Sato ,  Keiko Kizawa

IPC分类号： H01L31/18

CPC分类号： H01L31/1864 ,  H01L21/2225 ,  H01L21/2255 ,  H01L31/022425 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In a method for producing a photovoltaic cell, the improvement comprising: 1) coating a portion of a semiconductor substrate with a layer of a composition comprising acceptor element-containing glass particles and a dispersion medium, and 2) heating the coated semiconductor substrate to a temperature sufficient to cause acceptor element diffusion from the glass particles into the semiconductor substrate so as to form an p-type diffusion region in the semiconductor substrate.

摘要翻译： 在制造光伏电池的方法中，其改进包括：1）用包括含有受体元素的玻璃颗粒和分散介质的组合物层涂覆半导体衬底的一部分，以及2）将涂覆的半导体衬底加热至 温度足以使受体元素从玻璃粒子扩散到半导体衬底中，以在半导体衬底中形成p型扩散区。

公开(公告)号：US20120122265A1

公开(公告)日：2012-05-17

申请号：US13298582

申请日：2011-11-17

申请人： Youichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuuichirou Adachi ,  Akihiro Orita ,  Tetsuya Satou ,  Keiko Kizawa

发明人： Youichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuuichirou Adachi ,  Akihiro Orita ,  Tetsuya Satou ,  Keiko Kizawa

IPC分类号： H01L31/0232

CPC分类号： H01L31/022441 ,  H01L31/18 ,  Y02E10/50

摘要： The method for producing a photovoltaic cell includes applying an n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium onto a first region on one surface side of a semiconductor substrate; applying a p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium onto a second region other than the first region on the surface of the semiconductor substrate where the first region is provided; a thermal diffusion process in which an n-type diffusion layer and a p-type diffusion layer are formed by heat-treating the semiconductor substrate onto which the n-type diffusion layer forming composition and the p-type diffusion layer forming composition are applied; and forming an electrode on each of the first region where the n-type diffusion layer is formed and the second region where the p-type diffusion layer is formed, respectively.

摘要翻译： 制造光伏电池的方法包括在半导体衬底的一个表面侧的第一区域上施加包含n型含杂质玻璃粉末和分散介质的n型扩散层形成组合物; 将包含p型含杂质的玻璃粉末和分散介质的p型扩散层形成用组合物涂布在设置有所述第一区域的所述半导体基板的表面上的除了所述第一区域以外的第二区域上; 通过对施加了n型扩散层形成组合物和p型扩散层形成组合物的半导体衬底进行热处理形成n型扩散层和p型扩散层的热扩散工艺; 并且在形成有n型扩散层的第一区域和形成p型扩散层的第二区域分别形成电极。

公开(公告)号：US08404599B2

公开(公告)日：2013-03-26

申请号：US13298475

申请日：2011-11-17

申请人： Youichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuuichirou Adachi ,  Akihiro Orita ,  Tetsuya Satou ,  Keiko Kizawa

发明人： Youichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuuichirou Adachi ,  Akihiro Orita ,  Tetsuya Satou ,  Keiko Kizawa

IPC分类号： H01L21/31

CPC分类号： H01L31/1804 ,  H01L21/2225 ,  H01L21/2255 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.

摘要翻译： 制造光伏电池的方法包括在半导体衬底的一个表面侧的部分区域上施加包含n型含杂质玻璃粉末和分散介质的第一n型扩散层形成组合物; 在至少在半导体衬底的表面上的部分区域以外的区域施加第二n型扩散层形成组合物，其包含含n型杂质的玻璃粉末和分散介质，其中浓度 n型杂质比施加第一n型扩散层形成组合物的第一n型扩散层形成组合物低; 对其上施加有第一n型扩散层形成组合物和第二n型扩散层形成组合物的半导体衬底进行热处理以形成n型扩散层; 以及在所述部分区域上形成电极。

公开(公告)号：US08410000B2

公开(公告)日：2013-04-02

申请号：US13298535

申请日：2011-11-17

申请人： Youichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuuichirou Adachi ,  Akihiro Orita ,  Tetsuya Satou ,  Keiko Kizawa

发明人： Youichi Machii ,  Masato Yoshida ,  Takeshi Nojiri ,  Kaoru Okaniwa ,  Mitsunori Iwamuro ,  Shuuichirou Adachi ,  Akihiro Orita ,  Tetsuya Satou ,  Keiko Kizawa

IPC分类号： H01L21/31

CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.

摘要翻译： 制造太阳能电池的方法包括在半导体衬底的一个表面侧的部分区域上施加包含p型含杂质玻璃粉末和分散介质的第一p型扩散层形成组合物; 在至少在半导体衬底的表面上的部分区域以外的区域施加第二p型扩散层形成组合物，其包含含p型杂质的玻璃粉末和分散介质，其中浓度 p型杂质低于第一p型扩散层形成用组合物，其中涂布第一p型扩散层形成组合物; 对其上施加有第一p型扩散层形成组合物和第二p型扩散层形成组合物的半导体衬底进行热处理以形成p型扩散层; 以及在所述部分区域上形成电极。