发明申请
- 专利标题： METHOD OF GROWING SEMICONDUCTOR EPITAXIAL THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME
- 专利标题（中）： 生长半导体外延薄膜的方法和使用其制造半导体发光器件的方法
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申请号： US13547710申请日： 2012-07-12
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公开(公告)号： US20130014694A1公开(公告)日： 2013-01-17
- 发明人: Jong Sun MAENG , Bum Joon KIM , Hyun Seok RYU , Jung Hyun LEE , Ki Sung KIM
- 申请人： Jong Sun MAENG , Bum Joon KIM , Hyun Seok RYU , Jung Hyun LEE , Ki Sung KIM
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2011-0068801 20110712
- 主分类号： C30B25/14
- IPC分类号： C30B25/14 ; C30B25/10 ; C30B25/02
摘要：
A method of growing a semiconductor epitaxial thin film and a method of fabricating a semiconductor light emitting device using the same are provided. The method of growing a semiconductor epitaxial thin film, includes: disposing a plurality of wafers loaded in a wafer holder in a reaction chamber; and jetting a reactive gas including a chlorine organic metal compound to the wafers through a gas supply unit provided to extend in a direction in which the wafers are loaded, to grow a semiconductor epitaxial thin film on a surface of each of the wafers.