公开(公告)号：US20130014694A1

公开(公告)日：2013-01-17

申请号：US13547710

申请日：2012-07-12

申请人： Jong Sun MAENG ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Ki Sung KIM

发明人： Jong Sun MAENG ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Ki Sung KIM

IPC分类号： C30B25/14 ,  C30B25/10 ,  C30B25/02

CPC分类号： H01L21/0262 ,  C30B25/14 ,  C30B29/406 ,  H01L21/0254

摘要： A method of growing a semiconductor epitaxial thin film and a method of fabricating a semiconductor light emitting device using the same are provided. The method of growing a semiconductor epitaxial thin film, includes: disposing a plurality of wafers loaded in a wafer holder in a reaction chamber; and jetting a reactive gas including a chlorine organic metal compound to the wafers through a gas supply unit provided to extend in a direction in which the wafers are loaded, to grow a semiconductor epitaxial thin film on a surface of each of the wafers.

摘要翻译： 提供一种生长半导体外延薄膜的方法和使用其制造半导体发光器件的方法。 生长半导体外延薄膜的方法包括：将装载在晶片保持器中的多个晶片布置在反应室中; 并且通过设置成在晶片被加载的方向上延伸的气体供给单元将包括氯有机金属化合物的反应气体喷射到晶片，以在每个晶片的表面上生长半导体外延薄膜。

公开(公告)号：US20120322188A1

公开(公告)日：2012-12-20

申请号：US13523571

申请日：2012-06-14

申请人： Jong Sun MAENG ,  Ki Ho PARK ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Boung Kyun KIM ,  Ki Sung KIM ,  Suk Ho YOON

发明人： Jong Sun MAENG ,  Ki Ho PARK ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Boung Kyun KIM ,  Ki Sung KIM ,  Suk Ho YOON

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/0079

摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

公开(公告)号：US20150221826A1

公开(公告)日：2015-08-06

申请号：US14540969

申请日：2014-11-13

申请人： Jung Seung YANG ,  Seong Joon CHO ,  Bum Joon KIM ,  Dong Gyu SHIN ,  Hyun Wook SHIM ,  Suk Ho YOON

发明人： Jung Seung YANG ,  Seong Joon CHO ,  Bum Joon KIM ,  Dong Gyu SHIN ,  Hyun Wook SHIM ,  Suk Ho YOON

IPC分类号： H01L33/24 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC分类号： H01L33/24 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/32

摘要： The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

摘要翻译： 氮化物半导体发光器件包括第一导电型氮化物半导体层，设置在第一导电型氮化物半导体层上的第一超晶格层，设置在第一超晶格层上并具有多个V形凹坑的凹坑形成层 ，第二超晶格层，有源层和设置在有源层上并填充V形凹坑的第二导电型氮化物半导体层。 第二超晶格层设置在凹坑形成层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。 有源层设置在第二超晶格层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。

公开(公告)号：US20080054271A1

公开(公告)日：2008-03-06

申请号：US11692660

申请日：2007-03-28

申请人： Sang-Yeob SONG ,  Ji Hye SHIM ,  Bum Joon KIM

发明人： Sang-Yeob SONG ,  Ji Hye SHIM ,  Bum Joon KIM

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/02

摘要： A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

摘要翻译： 氮化物半导体发光二极管（LED）包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层，所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。