公开(公告)号：US20120322188A1

公开(公告)日：2012-12-20

申请号：US13523571

申请日：2012-06-14

申请人： Jong Sun MAENG ,  Ki Ho PARK ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Boung Kyun KIM ,  Ki Sung KIM ,  Suk Ho YOON

发明人： Jong Sun MAENG ,  Ki Ho PARK ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Boung Kyun KIM ,  Ki Sung KIM ,  Suk Ho YOON

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/0079

摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

公开(公告)号：US20130014694A1

公开(公告)日：2013-01-17

申请号：US13547710

申请日：2012-07-12

申请人： Jong Sun MAENG ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Ki Sung KIM

发明人： Jong Sun MAENG ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Ki Sung KIM

IPC分类号： C30B25/14 ,  C30B25/10 ,  C30B25/02

CPC分类号： H01L21/0262 ,  C30B25/14 ,  C30B29/406 ,  H01L21/0254

摘要： A method of growing a semiconductor epitaxial thin film and a method of fabricating a semiconductor light emitting device using the same are provided. The method of growing a semiconductor epitaxial thin film, includes: disposing a plurality of wafers loaded in a wafer holder in a reaction chamber; and jetting a reactive gas including a chlorine organic metal compound to the wafers through a gas supply unit provided to extend in a direction in which the wafers are loaded, to grow a semiconductor epitaxial thin film on a surface of each of the wafers.

摘要翻译： 提供一种生长半导体外延薄膜的方法和使用其制造半导体发光器件的方法。 生长半导体外延薄膜的方法包括：将装载在晶片保持器中的多个晶片布置在反应室中; 并且通过设置成在晶片被加载的方向上延伸的气体供给单元将包括氯有机金属化合物的反应气体喷射到晶片，以在每个晶片的表面上生长半导体外延薄膜。

公开(公告)号：US20120167824A1

公开(公告)日：2012-07-05

申请号：US13285596

申请日：2011-10-31

申请人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Sung Tae Kim

发明人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Sung Tae Kim

IPC分类号： H01L21/00 ,  C23C16/458 ,  C23C16/455

CPC分类号： C23C16/45572 ,  C23C16/45578

摘要： A chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an internal chamber having an internal space, an external chamber configured to cover the internal chamber so as to maintain a sealing state thereof; a wafer holder disposed within the internal chamber for a plurality of wafers stacked therein; a gas supplier including an inner pipe having an inner path, an external pipe having an external path, a refrigeration pipe having a cooling path. The inner path of the inner pipe supplies a first process gas into the reaction chamber. The external path of the external pipe surrounds the inner pipe to supply a second process gas therethrough. The refrigeration pipe supplies a refrigerant to prevent temperature rise in the inner pipe.

摘要翻译： 一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内部室，外部室，其被构造成覆盖所述内部室以保持其密封状态; 设置在所述内部腔室内用于堆叠在其中的多个晶片的晶片保持器; 包括具有内部路径的内管，具有外部路径的外部管的气体供给器，具有冷却路径的制冷管。 内管的内部路径将第一工艺气体供应到反应室中。 外部管道的外部路径围绕内部管道以供应通过其中的第二处理气体。 制冷管道供应制冷剂以防止内管中的温度上升。

公开(公告)号：US20120171815A1

公开(公告)日：2012-07-05

申请号：US13276729

申请日：2011-10-19

申请人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Sung Tae Kim

发明人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Sung Tae Kim

IPC分类号： H01L21/50 ,  C23C16/458 ,  C23C16/455

CPC分类号： C23C16/303 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.

摘要翻译： 提供了一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内管，以及外管，其构造成覆盖内管以保持其密封状态; 设置在所述内管内并且容纳堆叠在其中的多个晶片的晶片保持器; 以及气体供给器，其包括设置在反应室外侧的至少一个杆管，以便向其供应反应性气体;多个分支管，连接到杆管，以将反应气体从反应室的外部引入到 反应室，以及设置有分支管的多个喷嘴，以将反应气体喷射到多个相应的晶片。