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    Method of manufacturing semiconductor light emitting device
    1.
    发明授权
    Method of manufacturing semiconductor light emitting device 有权
    制造半导体发光器件的方法

    公开(公告)号：US08859314B2

    公开(公告)日：2014-10-14

    申请号：US13523571

    申请日：2012-06-14

    申请人： Jong Sun Maeng ,  Ki Ho Park ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Boung Kyun Kim ,  Ki Sung Kim ,  Suk Ho Yoon

    发明人： Jong Sun Maeng ,  Ki Ho Park ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Boung Kyun Kim ,  Ki Sung Kim ,  Suk Ho Yoon

    IPC分类号： H01L33/32 ,  H01L33/00

    CPC分类号： H01L33/007 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/0079

    摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

    摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

    Method of manufacturing vertical light emitting diode with dual surface pattern to improve light extraction
    2.
    发明授权
    Method of manufacturing vertical light emitting diode with dual surface pattern to improve light extraction 有权
    制造具有双表面图案的垂直发光二极管的方法，以改善光提取

    公开(公告)号：US08455282B2

    公开(公告)日：2013-06-04

    申请号：US13162254

    申请日：2011-06-16

    申请人： Ki Sung Kim ,  Gi Bum Kim ,  Tae Hun Kim ,  Young Chul Shin ,  Young Sun Kim

    发明人： Ki Sung Kim ,  Gi Bum Kim ,  Tae Hun Kim ,  Young Chul Shin ,  Young Sun Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L33/22 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/20 ,  H01L2933/0025 ,  H01L2933/0091

    摘要： A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion.

    摘要翻译： 公开了一种半导体发光二极管（LED）及其制造方法。 制造半导体发光二极管（LED）的方法包括：在具有突起和凹陷的基板上形成包括第一导电半导体层，有源层和第二导电半导体层的发光结构; 从所述发光结构去除所述衬底以暴露对应于所述突起和凹陷的第一凹凸部分; 在第一凹凸部上形成保护层; 去除所述保护层的一部分以暴露所述第一凹凸部的凸部; 以及在所述第一凹凸部的所述凸部上形成第二凹凸部。 半导体发光二极管（LED）包括：包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 形成在所述发光结构上的第一凹凸部，在其凸部具有第二凹凸部; 以及填充所述第一凹凸部的凹部的保护层。

    Method for making use of site activity index and a system thereof
    3.
    发明授权
    Method for making use of site activity index and a system thereof 有权
    利用场地活动指数的方法及其系统

    公开(公告)号：US08321289B2

    公开(公告)日：2012-11-27

    申请号：US11575491

    申请日：2005-10-07

    申请人： Ki-Sung Kim

    发明人： Ki-Sung Kim

    IPC分类号： G06Q30/00

    CPC分类号： G06Q30/00 ,  G06Q30/0641

    摘要： Provided are a method and a system for applying site activity indexes by a site activity index applying system connected to a plurality of user terminals through the Internet. In one embodiment, the method includes checking whether a user who is connected to a web site through the Internet desires to buy a game item, checking whether to use the user's site activity indexes so as to buy the game item, checking whether the user possesses site activity indexes, and exchanging the site activity indexes with game items when the user possesses the site activity indexes. With the method and system for applying site activity indexes user loyalty and game participation may be increased.

    摘要翻译： 提供了一种通过因特网通过连接到多个用户终端的站点活动索引应用系统来应用站点活动索引的方法和系统。 在一个实施例中，该方法包括检查通过因特网连接到网站的用户是否希望购买游戏项目，检查是否使用用户的站点活动索引以购买游戏项目，检查用户是否拥有 网站活动指标，以及当用户拥有网站活动索引时，使用游戏项目交换网站活动索引。 通过应用网站活动指标的方法和系统，可以增加用户忠诚度和游戏参与度。

    CVD APPARATUS
    4.
    发明申请
    CVD APPARATUS 审中-公开
    CVD装置

    公开(公告)号：US20120167824A1

    公开(公告)日：2012-07-05

    申请号：US13285596

    申请日：2011-10-31

    申请人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Sung Tae Kim

    发明人： Jong Sun MAENG ,  Ki Sung Kim ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Sung Tae Kim

    IPC分类号： H01L21/00 ,  C23C16/458 ,  C23C16/455

    CPC分类号： C23C16/45572 ,  C23C16/45578

    摘要： A chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an internal chamber having an internal space, an external chamber configured to cover the internal chamber so as to maintain a sealing state thereof; a wafer holder disposed within the internal chamber for a plurality of wafers stacked therein; a gas supplier including an inner pipe having an inner path, an external pipe having an external path, a refrigeration pipe having a cooling path. The inner path of the inner pipe supplies a first process gas into the reaction chamber. The external path of the external pipe surrounds the inner pipe to supply a second process gas therethrough. The refrigeration pipe supplies a refrigerant to prevent temperature rise in the inner pipe.

    摘要翻译： 一种化学气相沉积（CVD）装置，包括：反应室，包括具有内部空间的内部室，外部室，其被构造成覆盖所述内部室以保持其密封状态; 设置在所述内部腔室内用于堆叠在其中的多个晶片的晶片保持器; 包括具有内部路径的内管，具有外部路径的外部管的气体供给器，具有冷却路径的制冷管。 内管的内部路径将第一工艺气体供应到反应室中。 外部管道的外部路径围绕内部管道以供应通过其中的第二处理气体。 制冷管道供应制冷剂以防止内管中的温度上升。

    High power vertical cavity surface emitting laser
    7.
    发明授权
    High power vertical cavity surface emitting laser 有权
    大功率垂直腔表面发射激光器

    公开(公告)号：US07684454B2

    公开(公告)日：2010-03-23

    申请号：US11448839

    申请日：2006-06-08

    申请人： Ki-sung Kim

    发明人： Ki-sung Kim

    IPC分类号： H01S5/00

    CPC分类号： H01S5/141 ,  H01S5/041 ,  H01S5/183

    摘要： An improved VECSEL device is provided in which the gain of each of the quantum well layers can be increased in a periodic gain structure. A vertical external cavity surface emitting laser (VECSEL) device comprising: a substrate; a bottom DBR mirror formed on the substrate; a multiple quantum well layer formed on the bottom DBR mirror and comprising: a plurality of quantum well layers; first and second strain compensation layers sequentially formed above and below each of the quantum well layers to gradually relieve the strain of the quantum well layers; a capping layer formed on the multiple quantum well layer; an optical pump radiating a pump beam to the surface of the capping layer; and an external cavity mirror separated from and facing the bottom DBR mirror.

    摘要翻译： 提供了一种改进的VECSEL器件，其中可以在周期性增益结构中增加每个量子阱层的增益。 一种垂直外腔表面发射激光器（VECSEL）器件，包括：衬底; 形成在基板上的底部DBR镜; 形成在底部DBR反射镜上的多量子阱层，包括：多个量子阱层; 第一和第二应变补偿层，顺序地形成在每个量子阱层之上和之下，以逐渐减轻量子阱层的应变; 形成在所述多量子阱层上的覆盖层; 将泵浦光束辐射到覆盖层的表面的光泵; 以及与底部DBR镜分离并面向底部DBR镜的外部腔镜。

    Nonvolatile memory devices using variable resistive elements
    8.
    发明申请
    Nonvolatile memory devices using variable resistive elements 有权
    使用可变电阻元件的非易失性存储器件

    公开(公告)号：US20090285009A1

    公开(公告)日：2009-11-19

    申请号：US12453529

    申请日：2009-05-14

    申请人： Ki-Sung Kim ,  Byung-Gil Choi ,  Young-Ran Kim ,  Jong-Chul Park

    发明人： Ki-Sung Kim ,  Byung-Gil Choi ,  Young-Ran Kim ,  Jong-Chul Park

    IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C5/14

    CPC分类号： G11C13/0023 ,  G11C8/10 ,  G11C13/0004 ,  G11C13/0026 ,  G11C2213/72

    摘要： A nonvolatile memory device using a variable resistive element is provided. The nonvolatile memory device may include a memory cell array which includes an array of multiple nonvolatile memory cells having variable resistance levels depending on data stored. Word lines may be coupled with each column of the nonvolatile memory cells. Local bit lines may be coupled with each row of the nonvolatile memory cells. Global bit lines may be selectively coupled with the multiple local bit lines.

    摘要翻译： 提供了使用可变电阻元件的非易失性存储器件。 非易失性存储器件可以包括存储单元阵列，其包括具有取决于存储的数据的可变电阻等级的多个非易失性存储单元的阵列。 字线可以与非易失性存储单元的每一列耦合。 局部位线可以与非易失性存储器单元的每一行耦合。 全局位线可以选择性地与多个局部位线耦合。