发明申请
- 专利标题： MEMORY DEVICE HAVING IMPROVED PROGRAMMING OPERATION
- 专利标题（中）： 具有改进的编程操作的存储器件
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申请号： US13621052申请日： 2012-09-15
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公开(公告)号： US20130016569A1公开(公告)日： 2013-01-17
- 发明人: Prashant S. Damle , Krishna Parat , Alessandro Torsi , Carlo Musilli , Kalpana Vakati , Akira Goda
- 申请人： Prashant S. Damle , Krishna Parat , Alessandro Torsi , Carlo Musilli , Kalpana Vakati , Akira Goda
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 主分类号： G11C16/10
- IPC分类号： G11C16/10 ; G11C16/04
摘要：
Some embodiments include methods and devices having a module and memory cells. The module is configured to reduce the amount of electrons in the sources and drains of the memory cells during a programming operation.
公开/授权文献
- US08705290B2 Memory device having improved programming operation 公开/授权日：2014-04-22
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