发明申请
- 专利标题： Method for Forming CMOS Image Sensors
- 专利标题（中）： CMOS图像传感器的形成方法
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申请号： US13196560申请日： 2011-08-02
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公开(公告)号： US20130034929A1公开(公告)日： 2013-02-07
- 发明人: Ching-Chung Su , Shih-Chang Liu , Shih Pei Chou , Chia-Shiung Tsai , Chun-Tsung Kuo , Wen-I Hsu , Yi-Shin Chu
- 申请人： Ching-Chung Su , Shih-Chang Liu , Shih Pei Chou , Chia-Shiung Tsai , Chun-Tsung Kuo , Wen-I Hsu , Yi-Shin Chu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L31/18
- IPC分类号： H01L31/18
摘要：
A method includes forming a blocking layer over a substrate, and etching the blocking layer to form a trench in the blocking layer. A dielectric layer is formed, wherein the dielectric layer comprises a first portion over the blocking layer, and a second portion in the trench. After the step of forming the dielectric layer, an implantation is performed to implant an impurity into the substrate to form a deep well region. After the implantation, the dielectric layer and the blocking layer are removed.
公开/授权文献
- US08987033B2 Method for forming CMOS image sensors 公开/授权日：2015-03-24