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公开(公告)号:US08987033B2
公开(公告)日:2015-03-24
申请号:US13196560
申请日:2011-08-02
申请人: Ching-Chung Su , Shih-Chang Liu , Shih Pei Chou , Chia-Shiung Tsai , Chun-Tsung Kuo , Wen-I Hsu , Yi-Shin Chu
发明人: Ching-Chung Su , Shih-Chang Liu , Shih Pei Chou , Chia-Shiung Tsai , Chun-Tsung Kuo , Wen-I Hsu , Yi-Shin Chu
IPC分类号: H01L21/00 , H01L27/146
CPC分类号: H01L27/1463
摘要: A method includes forming a blocking layer over a substrate, and etching the blocking layer to form a trench in the blocking layer. A dielectric layer is formed, wherein the dielectric layer comprises a first portion over the blocking layer, and a second portion in the trench. After the step of forming the dielectric layer, an implantation is performed to implant an impurity into the substrate to form a deep well region. After the implantation, the dielectric layer and the blocking layer are removed.
摘要翻译: 一种方法包括在衬底上形成阻挡层,并蚀刻阻挡层以在阻挡层中形成沟槽。 形成介电层,其中电介质层包括阻挡层上的第一部分和沟槽中的第二部分。 在形成介电层的步骤之后,进行注入以将杂质注入衬底以形成深阱区。 在植入之后,去除介电层和阻挡层。
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公开(公告)号:US20130034929A1
公开(公告)日:2013-02-07
申请号:US13196560
申请日:2011-08-02
申请人: Ching-Chung Su , Shih-Chang Liu , Shih Pei Chou , Chia-Shiung Tsai , Chun-Tsung Kuo , Wen-I Hsu , Yi-Shin Chu
发明人: Ching-Chung Su , Shih-Chang Liu , Shih Pei Chou , Chia-Shiung Tsai , Chun-Tsung Kuo , Wen-I Hsu , Yi-Shin Chu
IPC分类号: H01L31/18
CPC分类号: H01L27/1463
摘要: A method includes forming a blocking layer over a substrate, and etching the blocking layer to form a trench in the blocking layer. A dielectric layer is formed, wherein the dielectric layer comprises a first portion over the blocking layer, and a second portion in the trench. After the step of forming the dielectric layer, an implantation is performed to implant an impurity into the substrate to form a deep well region. After the implantation, the dielectric layer and the blocking layer are removed.
摘要翻译: 一种方法包括在衬底上形成阻挡层,并蚀刻阻挡层以在阻挡层中形成沟槽。 形成介电层,其中电介质层包括阻挡层上的第一部分和沟槽中的第二部分。 在形成介电层的步骤之后,进行注入以将杂质注入衬底以形成深阱区。 在植入之后,去除介电层和阻挡层。
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公开(公告)号:US08049213B2
公开(公告)日:2011-11-01
申请号:US11958942
申请日:2007-12-18
申请人: Ching-Chung Su , Yi-Wei Chiu , Tzu Chan Weng , Yih Song Chiu , Pin Chia Su , Chih-Cherng Jeng , Kuo-Hsiu Wei
发明人: Ching-Chung Su , Yi-Wei Chiu , Tzu Chan Weng , Yih Song Chiu , Pin Chia Su , Chih-Cherng Jeng , Kuo-Hsiu Wei
IPC分类号: H01L21/66 , H01L23/544
摘要: A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.
摘要翻译: 测量尺寸特性的方法包括提供衬底并在衬底上形成反射层。 然后在反射层上形成电介质层。 电介质层包括在透明区域内插入的光栅图案和电阻率测试线。 然后将辐射引导到电介质层上,使得一些辐射透过透明区域到达反射层。 然后从由金属光栅图案反射和散射的辐射中检测出辐射图。 分析辐射图以确定第一维信息。 然后测量电阻率测试线的电阻,并分析该电阻以确定第二维信息。 然后比较第一和第二维信息。
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公开(公告)号:US20090152545A1
公开(公告)日:2009-06-18
申请号:US11958942
申请日:2007-12-18
申请人: Ching-Chung Su , Yi-Wei Chiu , Tzu-Chan Weng , Yih Song Chiu , Pin Chia Su , Chih-Cherng Jeng , Kuo-Hsiu Wei
发明人: Ching-Chung Su , Yi-Wei Chiu , Tzu-Chan Weng , Yih Song Chiu , Pin Chia Su , Chih-Cherng Jeng , Kuo-Hsiu Wei
摘要: A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.
摘要翻译: 测量尺寸特性的方法包括提供衬底并在衬底上形成反射层。 然后在反射层上形成电介质层。 电介质层包括在透明区域内插入的光栅图案和电阻率测试线。 然后将辐射引导到电介质层上,使得一些辐射透过透明区域到达反射层。 然后从由金属光栅图案反射和散射的辐射中检测出辐射图。 分析辐射图以确定第一维信息。 然后测量电阻率测试线的电阻,并分析该电阻以确定第二维信息。 然后比较第一和第二维信息。
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