发明申请
- 专利标题： Flash Memory and Manufacturing Method Thereof
- 专利标题（中）： 闪存及其制造方法
-
申请号： US13398853申请日： 2012-02-17
-
公开(公告)号： US20130140620A1公开(公告)日： 2013-06-06
- 发明人: Tzung-Han Lee , Chung-Lin Huang , Ron Fu Chu , Dah-Wei Liu
- 申请人： Tzung-Han Lee , Chung-Lin Huang , Ron Fu Chu , Dah-Wei Liu
- 优先权： TW100144200 20111201
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28
摘要：
The present invention discloses a flash memory. The flash memory includes a substrate and a memory string, a plurality of landing pads, a plurality of common source lines, a plurality of bit line contacts and at least a bit line, which are disposed on the substrate in sequence. The memory string includes a plurality of storage transistors. The landing pads are disposed between each of the storage transistors. The common source lines and the bit line contact are electrically connected to the landing pads alternatively. The common line is disposed on the common line contacts and is electrically connected thereto. The present invention further provides a manufacturing method of making the same.
信息查询
IPC分类:
