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    FLASH MEMORY STRUCTURE
    1.
    发明申请
    FLASH MEMORY STRUCTURE 审中-公开
    闪存存储器结构

    公开(公告)号：US20130062676A1

    公开(公告)日：2013-03-14

    申请号：US13239364

    申请日：2011-09-21

    申请人： Tzung-Han Lee ,  Chung-Lin Huang ,  Ron Fu Chu ,  Dah-Wei Liu

    发明人： Tzung-Han Lee ,  Chung-Lin Huang ,  Ron Fu Chu ,  Dah-Wei Liu

    IPC分类号： H01L29/788

    CPC分类号： H01L27/11521 ,  H01L29/40114

    摘要： A flash memory structure includes a semiconductor substrate, a gate dielectric layer on the semiconductor substrate, a floating gate on the gate dielectric layer, a capacitor dielectric layer conformally covering the floating gate, wherein the capacitor dielectric layer forms a top surface and four sidewall surfaces; and an isolated conductive cap layer covering the top surface and the four sidewall surfaces.

    摘要翻译： 闪速存储器结构包括半导体衬底，半导体衬底上的栅极电介质层，栅极介电层上的浮置栅极，保形地覆盖浮置栅极的电容器电介质层，其中电容器介电层形成顶表面和四个侧壁表面 ; 以及覆盖顶表面和四个侧壁表面的隔离的导电盖层。

    Flash Memory and Manufacturing Method Thereof
    2.
    发明申请
    Flash Memory and Manufacturing Method Thereof 审中-公开
    闪存及其制造方法

    公开(公告)号：US20130140620A1

    公开(公告)日：2013-06-06

    申请号：US13398853

    申请日：2012-02-17

    申请人： Tzung-Han Lee ,  Chung-Lin Huang ,  Ron Fu Chu ,  Dah-Wei Liu

    发明人： Tzung-Han Lee ,  Chung-Lin Huang ,  Ron Fu Chu ,  Dah-Wei Liu

    IPC分类号： H01L29/78 ,  H01L21/28

    CPC分类号： H01L27/11524

    摘要： The present invention discloses a flash memory. The flash memory includes a substrate and a memory string, a plurality of landing pads, a plurality of common source lines, a plurality of bit line contacts and at least a bit line, which are disposed on the substrate in sequence. The memory string includes a plurality of storage transistors. The landing pads are disposed between each of the storage transistors. The common source lines and the bit line contact are electrically connected to the landing pads alternatively. The common line is disposed on the common line contacts and is electrically connected thereto. The present invention further provides a manufacturing method of making the same.

    摘要翻译： 本发明公开了一种闪速存储器。 闪速存储器包括依次设置在基板上的基板和存储器串，多个着陆焊盘，多个公共源极线，多个位线触点和至少一个位线。 该存储器串包括多个存储晶体管。 着陆焊盘设置在每个存储晶体管之间。 公共源线和位线接触件可替换地电连接到着陆焊盘。 公共线设置在公共线路触点上并与其电连接。 本发明还提供制造该方法的制造方法。