发明申请
- 专利标题: Forming Patterned Graphene Layers
- 专利标题(中): 形成图案化石墨烯层
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申请号: US13310885申请日: 2011-12-05
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公开(公告)号: US20130143000A1公开(公告)日: 2013-06-06
- 发明人: Ali Afzali-Ardakani , Ahmed Maarouf , Glenn J. Martyna , Katherine Saenger
- 申请人: Ali Afzali-Ardakani , Ahmed Maarouf , Glenn J. Martyna , Katherine Saenger
- 申请人地址: EG Cairo-Alexandria Desert Road US NY Armonk
- 专利权人: EGYPT NANOTECHNOLOGY CENTER (EGNC),INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: EGYPT NANOTECHNOLOGY CENTER (EGNC),INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: EG Cairo-Alexandria Desert Road US NY Armonk
- 主分类号: B32B33/00
- IPC分类号: B32B33/00 ; H01B13/00 ; B32B3/00 ; B32B38/10 ; B82Y30/00
摘要:
An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
公开/授权文献
- US09102118B2 Forming patterned graphene layers 公开/授权日:2015-08-11