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公开(公告)号：US20130143000A1
公开(公告)日：2013-06-06
申请号：US13310885
申请日：2011-12-05
CPC分类号： H01B1/04 , B32B3/00 , B32B3/12 , B32B9/007 , B32B9/041 , B32B15/20 , B32B2307/202 , B32B2307/206 , B32B2457/00 , B82Y30/00 , B82Y40/00 , C01B32/184 , C23F1/02 , H01L21/02527 , H01L21/042 , H01L21/324 , Y10T428/24545 , Y10T428/24851 , Y10T428/24909 , Y10T428/24917
摘要： An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
摘要翻译： 一种用于在衬底上形成图案化的石墨烯层的装置和方法。 一种这样的方法包括在基底上形成碳化物形成金属或含金属合金的至少一个图案化结构，在碳化物形成金属或含金属合金的至少一个图案化结构的顶部上施加石墨烯层 在基板上，在环境中在形成碳化物的金属或含金属的合金的至少一个图案化结构的顶部上加热石墨烯层，以去除邻近碳化物形成金属的至少一个图案化结构的石墨烯区域 或含金属的合金，以及去除形成碳化物的金属或含金属的合金的至少一个图案化结构，以在衬底上产生图案化的石墨烯层，其中衬底上的图案化石墨烯层提供电子器件的载流子迁移率。
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公开(公告)号：US09102118B2
公开(公告)日：2015-08-11
申请号：US13310885
申请日：2011-12-05
CPC分类号： H01B1/04 , B32B3/00 , B32B3/12 , B32B9/007 , B32B9/041 , B32B15/20 , B32B2307/202 , B32B2307/206 , B32B2457/00 , B82Y30/00 , B82Y40/00 , C01B32/184 , C23F1/02 , H01L21/02527 , H01L21/042 , H01L21/324 , Y10T428/24545 , Y10T428/24851 , Y10T428/24909 , Y10T428/24917
摘要： An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
摘要翻译： 一种用于在衬底上形成图案化的石墨烯层的装置和方法。 一种这样的方法包括在基底上形成碳化物形成金属或含金属合金的至少一个图案化结构，在碳化物形成金属或含金属合金的至少一个图案化结构的顶部上施加石墨烯层 在基板上，在环境中在形成碳化物的金属或含金属的合金的至少一个图案化结构的顶部上加热石墨烯层，以去除邻近碳化物形成金属的至少一个图案化结构的石墨烯区域 或含金属的合金，以及去除形成碳化物的金属或含金属的合金的至少一个图案化结构，以在衬底上产生图案化的石墨烯层，其中衬底上的图案化石墨烯层提供电子器件的载流子迁移率。
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公开(公告)号：US20130164882A1
公开(公告)日：2013-06-27
申请号：US13337002
申请日：2011-12-23
申请人： Ali Afzali-Ardakani , Ageeth A. Bol , Mostafa M. EI-Ashry , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Dennis M. Newns , Razvan Nistor , George S. Tulevski
发明人： Ali Afzali-Ardakani , Ageeth A. Bol , Mostafa M. EI-Ashry , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Dennis M. Newns , Razvan Nistor , George S. Tulevski
IPC分类号： H01L31/0352 , H01L31/0224
CPC分类号： H01L31/075 , H01L31/022466 , H01L51/444 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： Disclosed is a method which includes forming a bottom metallic electrode on an insulating substrate; forming a semiconductor junction on the metallic electrode; forming a transparent conducting overlayer in contact with the semiconductor junction; and forming a metallic layer in contact with the transparent conducting overlayer, wherein the metallic layer is formed by a plating process. The plating process may be an electroplating process or an electroless plating process. The transparent conducting overlayer may be carbon nanotubes or graphene. The semiconductor junction may be a p-i-n semiconductor junction, a p-n semiconductor junction, an n-p semiconductor junction or an n-i-p semiconductor junction.
摘要翻译： 公开了一种在绝缘基板上形成底部金属电极的方法， 在所述金属电极上形成半导体结; 形成与半导体结接触的透明导电覆层; 以及形成与所述透明导电覆盖层接触的金属层，其中所述金属层通过电镀工艺形成。 电镀工艺可以是电镀工艺或无电镀工艺。 透明导电覆层可以是碳纳米管或石墨烯。 半导体结可以是p-i-n半导体结，p-n半导体结，n-p半导体结或n-i-p半导体结。
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公开(公告)号：US20130143769A1
公开(公告)日：2013-06-06
申请号：US13310194
申请日：2011-12-02
申请人： Ali Afzali-Ardakani , Shu-jen Han , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Razvan Nistor , Hsinyu Tsai
发明人： Ali Afzali-Ardakani , Shu-jen Han , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Razvan Nistor , Hsinyu Tsai
CPC分类号： G01N33/531 , B82Y30/00 , B82Y40/00 , C01B32/194 , G01N33/5308 , G01N33/54373 , G01N33/54393 , G01N33/551 , G01N2400/00 , H01L21/30
摘要： A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.
摘要翻译： 一种基于石墨烯纳米薄膜的电荷传感器和用于生产基于石墨烯纳米薄膜的电荷传感器的方法。 该方法包括以周期性方式在石墨烯中产生多个孔以产生具有多个孔的图案化阵列的石墨烯纳米粒子，钝化石墨烯纳米粒子的多个孔中的每一个的边缘以允许石墨烯纳米粒子的官能化，并使 石墨烯纳米粒子的多个孔的每个的钝化边缘具有促进靶分子的受体与多个孔中的一个或多个的边缘的化学结合的化学化合物，允许靶分子结合受体，导致 将转移到石墨烯纳米片上的电荷以产生用于靶分子的基于石墨烯纳米膜的电荷传感器。
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5.发明授权Controlled assembly of charged nanoparticles using functionalized graphene nanomesh 有权使用功能化石墨烯纳米粒子控制组装带电纳米粒子公开(公告)号：US08835686B2
公开(公告)日：2014-09-16
申请号：US13302242
申请日：2011-11-22
IPC分类号： C07C209/60 , C07C37/66 , B82Y30/00 , B82Y40/00 , B82B3/00
CPC分类号： B82B3/0057 , B82Y30/00 , B82Y40/00 , Y10S977/734 , Y10S977/788 , Y10S977/846
摘要： A method, an apparatus and an article of manufacture for attracting charged nanoparticles using a graphene nanomesh. The method includes creating a graphene nanomesh by generating multiple holes in graphene, wherein each of the multiple holes is of a size appropriate to a targeted charged nanoparticle, selectively passivating the multiple holes of the graphene nanomesh to form a charged ring in the graphene nanomesh by treating the graphene nanomesh with chemistry yielding a trap with an opposite charge to that of the targeted nanoparticle, and electrostatically attracting the target charged nanoparticle to the oppositely charged ring to facilitate docking of the charged nanoparticle to the graphene nanomesh.
摘要翻译： 使用石墨烯纳米粒子吸引带电纳米粒子的方法，装置和制品。 该方法包括通过在石墨烯中产生多个孔来产生石墨烯纳米单体，其中多个孔中的每一个具有适合于目标带电纳米颗粒的尺寸，选择性地钝化石墨烯纳米颗粒的多个孔，以在石墨烯纳米颗粒中形成带电环，通过 用化学法处理石墨烯纳米微粒，产生与目标纳米颗粒相反电荷的阱，并静电吸引目标带电纳米颗粒到相反电荷的环，以便于带电的纳米颗粒与石墨烯纳米颗粒的对接。
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6.发明申请Controlled Assembly of Charged Nanoparticles Using Functionalized Graphene Nanomesh 有权使用功能化石墨烯纳米微粒的带电纳米颗粒的控制装配公开(公告)号：US20130131383A1
公开(公告)日：2013-05-23
申请号：US13302242
申请日：2011-11-22
IPC分类号： C07C209/60 , C07C37/66 , B82Y30/00 , B82Y40/00
CPC分类号： B82B3/0057 , B82Y30/00 , B82Y40/00 , Y10S977/734 , Y10S977/788 , Y10S977/846
摘要： A method, an apparatus and an article of manufacture for attracting charged nanoparticles using a graphene nanomesh. The method includes creating a graphene nanomesh by generating multiple holes in graphene, wherein each of the multiple holes is of a size appropriate to a targeted charged nanoparticle, selectively passivating the multiple holes of the graphene nanomesh to form a charged ring in the graphene nanomesh by treating the graphene nanomesh with chemistry yielding a trap with an opposite charge to that of the targeted nanoparticle, and electrostatically attracting the target charged nanoparticle to the oppositely charged ring to facilitate docking of the charged nanoparticle to the graphene nanomesh.
摘要翻译： 使用石墨烯纳米粒子吸引带电纳米粒子的方法，装置和制品。 该方法包括通过在石墨烯中产生多个孔来产生石墨烯纳米单体，其中多个孔中的每一个具有适合于目标带电纳米颗粒的尺寸，选择性地钝化石墨烯纳米颗粒的多个孔，以在石墨烯纳米颗粒中形成带电环，通过 用化学法处理石墨烯纳米微粒，产生与目标纳米颗粒相反电荷的阱，并静电吸引目标带电纳米颗粒到相反电荷的环，以便于带电的纳米颗粒与石墨烯纳米颗粒的对接。
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公开(公告)号：US09102540B2
公开(公告)日：2015-08-11
申请号：US13310194
申请日：2011-12-02
申请人： Ali Afzali-Ardakani , Shu-jen Han , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Razvan Nistor , Hsinyu Tsai
发明人： Ali Afzali-Ardakani , Shu-jen Han , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Razvan Nistor , Hsinyu Tsai
IPC分类号： B82Y30/00 , C01B31/04 , B82Y40/00 , G01N33/543
CPC分类号： G01N33/531 , B82Y30/00 , B82Y40/00 , C01B32/194 , G01N33/5308 , G01N33/54373 , G01N33/54393 , G01N33/551 , G01N2400/00 , H01L21/30
摘要： A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.
摘要翻译： 一种基于石墨烯纳米薄膜的电荷传感器和用于生产基于石墨烯纳米薄膜的电荷传感器的方法。 该方法包括以周期性方式在石墨烯中产生多个孔以产生具有多个孔的图案化阵列的石墨烯纳米粒子，钝化石墨烯纳米粒子的多个孔中的每一个的边缘以允许石墨烯纳米粒子的官能化，并使 石墨烯纳米粒子的多个孔的每个的钝化边缘具有促进靶分子的受体与多个孔中的一个或多个的边缘的化学结合的化学化合物，允许靶分子结合受体，导致 将转移到石墨烯纳米片上的电荷以产生用于靶分子的基于石墨烯纳米膜的电荷传感器。
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8.发明授权Carbon nanotube-graphene hybrid transparent conductor and field effect transistor 有权碳纳米管 - 石墨烯混合透明导体和场效应晶体管公开(公告)号：US09177688B2
公开(公告)日：2015-11-03
申请号：US13301943
申请日：2011-11-22
申请人： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
发明人： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
IPC分类号： B32B9/00 , H01B1/04 , C01B31/02 , C01B31/04 , C23C16/26 , H01L51/10 , H01L29/16 , H01L29/778 , H01L29/66 , H01L29/786 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L51/00 , H01L51/05 , H01L29/06
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , C01B2202/00 , C01B2204/00 , C23C16/26 , H01B1/04 , H01L29/0673 , H01L29/1606 , H01L29/66742 , H01L29/778 , H01L29/78618 , H01L29/78684 , H01L29/78696 , H01L51/0025 , H01L51/0545 , H01L51/0562 , H01L51/0566 , H01L51/102 , H01L51/105 , Y10S977/742 , Y10S977/75 , Y10S977/938 , Y10T428/30
摘要： A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.
摘要翻译： 一种纳米管 - 石墨烯复合膜及其形成清洁的纳米管 - 石墨烯混合膜的方法。 该方法包括在衬底上沉积纳米管膜以产生纳米管膜层，从不接触衬底的纳米管膜的表面去除杂质以产生清洁的纳米管膜层，在清洁层上沉积一层石墨烯 的纳米管膜以制造纳米管 - 石墨烯混合膜，并从纳米管 - 石墨烯混合膜的表面除去杂质，以制造清洁的纳米管 - 石墨烯混合膜，其中混合膜具有改善的电性能。 另一种方法包括在金属箔上沉积纳米管膜以产生纳米管膜层，将具有沉积纳米管膜的金属箔放置在化学气相沉积炉中以在纳米管膜上生长石墨烯以形成纳米管 - 石墨烯混合膜， 并将纳米管 - 石墨烯混合膜转移到衬底上。
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9.发明申请Carbon Nanotube-Graphene Hybrid Transparent Conductor and Field Effect Transistor 有权碳纳米管 - 石墨烯混合透明导体和场效应晶体管公开(公告)号：US20130130037A1
公开(公告)日：2013-05-23
申请号：US13301943
申请日：2011-11-22
申请人： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
发明人： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , C01B2202/00 , C01B2204/00 , C23C16/26 , H01B1/04 , H01L29/0673 , H01L29/1606 , H01L29/66742 , H01L29/778 , H01L29/78618 , H01L29/78684 , H01L29/78696 , H01L51/0025 , H01L51/0545 , H01L51/0562 , H01L51/0566 , H01L51/102 , H01L51/105 , Y10S977/742 , Y10S977/75 , Y10S977/938 , Y10T428/30
摘要： A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.
摘要翻译： 一种纳米管 - 石墨烯复合膜及其形成清洁的纳米管 - 石墨烯混合膜的方法。 该方法包括在衬底上沉积纳米管膜以产生纳米管膜层，从不接触衬底的纳米管膜的表面去除杂质以产生清洁的纳米管膜层，在清洁层上沉积一层石墨烯 的纳米管膜以制造纳米管 - 石墨烯混合膜，并从纳米管 - 石墨烯混合膜的表面除去杂质，以制造清洁的纳米管 - 石墨烯混合膜，其中混合膜具有改善的电性能。 另一种方法包括在金属箔上沉积纳米管膜以产生纳米管膜层，将具有沉积纳米管膜的金属箔放置在化学气相沉积炉中以在纳米管膜上生长石墨烯以形成纳米管 - 石墨烯混合膜， 并将纳米管 - 石墨烯混合膜转移到衬底上。
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公开(公告)号：US20120000516A1
公开(公告)日：2012-01-05
申请号：US12828446
申请日：2010-07-01
申请人： Ageeth A. Bol , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Dennis M. Newns , Razvan A. Nistor , George S. Tulevski
发明人： Ageeth A. Bol , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Dennis M. Newns , Razvan A. Nistor , George S. Tulevski
IPC分类号： H01L31/0288 , H01L31/18 , H01L31/0256
CPC分类号： H01L31/022433 , H01L31/022491 , H01L31/075 , Y02E10/548
摘要： A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and a plurality of fingers extending from the at least one bus bar portion.
摘要翻译： 太阳能电池包括半导体部分，设置在半导体部分的第一表面上的石墨烯层和在石墨烯层上图案化的第一导电层，第一导电层包括至少一个汇流条部分和从 所述至少一个汇流条部分。
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