发明申请
- 专利标题: METHOD FOR FORMING ANODIZED LAYER AND MOLD PRODUCTION METHOD
- 专利标题(中): 用于形成抗静电层和模具生产方法
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申请号: US13819547申请日: 2011-08-22
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公开(公告)号: US20130153537A1公开(公告)日: 2013-06-20
- 发明人: Akinobu Isurugi , Kiyoshi Minoura , Hidekazu Hayashi , Kenichiro Nakamatsu
- 申请人: Akinobu Isurugi , Kiyoshi Minoura , Hidekazu Hayashi , Kenichiro Nakamatsu
- 申请人地址: JP Osaka-shi, Osaka
- 专利权人: SHARP KABUSHIKI KAISHA
- 当前专利权人: SHARP KABUSHIKI KAISHA
- 当前专利权人地址: JP Osaka-shi, Osaka
- 优先权: JP2010-192843 20100830
- 国际申请: PCT/JP2011/068839 WO 20110822
- 主分类号: C25F3/02
- IPC分类号: C25F3/02
摘要:
An anodized layer formation method includes: providing an aluminum film provided on a support or an aluminum base; and forming a porous alumina layer which has minute recessed portions by applying a voltage between an anode which is electrically coupled to a surface of the aluminum film or the aluminum base and a cathode which is provided in an electrolytic solution with the surface of the aluminum film or the aluminum base being in contact with the electrolytic solution. The forming of the porous alumina layer includes increasing the voltage to a target value and, before the voltage is increased to the target value, increasing the voltage to a first peak value which is lower than the target value and thereafter decreasing the voltage to a value which is lower than the first peak value. As such, an anodized layer with reduced variation of recessed portions can be formed.
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