发明申请
- 专利标题: FIELD EFFECT TRANSISTOR WITH A VERTICAL CHANNEL AND FABRICATION METHOD THEREOF
- 专利标题(中): 具有垂直通道的场效应晶体管及其制造方法
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申请号: US13821944申请日: 2011-09-09
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公开(公告)号: US20130168759A1公开(公告)日: 2013-07-04
- 发明人: Ru Huang , Yujie Ai , Zhihua Hao , Shuangshuang Pu , Jiewen Fan , Shuai Sun , Runsheng Wang , Xiaoyan Xu
- 申请人: Ru Huang , Yujie Ai , Zhihua Hao , Shuangshuang Pu , Jiewen Fan , Shuai Sun , Runsheng Wang , Xiaoyan Xu
- 申请人地址: CN Beijing
- 专利权人: PEKING UNIVERSITY
- 当前专利权人: PEKING UNIVERSITY
- 当前专利权人地址: CN Beijing
- 优先权: CN201010506129.1 20101009
- 国际申请: PCT/CN11/79521 WO 20110909
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/66
摘要:
Disclosed herein is a field effect transistor with a vertical channel and a fabrication method thereof. A channel region of the field effect transistor is a circular ring-shaped Si platform, which is formed over a substrate and perpendicular to the substrate; a source, which is made of polysilicon, is located at an upper end of the Si platform; a drain is disposed at an outside of a lower end of the circular ring-shaped Si platform; a gate is placed on an outer side surface of the circular ring-shaped Si platform; and an inside of the circular ring-shaped Si platform is filled with a dielectric material. In comparison with the conventional vertical structure MOSFET with a Si platform, the circular ring-shaped structure field effect transistor according to the invention can effectively suppress the short channel effect and improve the device performance.