发明申请
- 专利标题： Low Temperature Deposition of Silicon-Containing Films
- 专利标题（中）： 含硅薄膜的低温沉积
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申请号： US13624190申请日： 2012-09-21
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公开(公告)号： US20130189853A1公开(公告)日： 2013-07-25
- 发明人: Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, JR. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
- 申请人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, JR. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
- 申请人地址： JP Tokyo US PA Allentown
- 专利权人： TOKYO ELECTRON LIMITED,AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人： TOKYO ELECTRON LIMITED,AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人地址： JP Tokyo US PA Allentown
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
公开/授权文献
- US08906455B2 Low temperature deposition of silicon-containing films 公开/授权日：2014-12-09
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