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34 条记录 (耗时 0.032 秒)

    Organoaminosilane precursors and methods for depositing films comprising same
    5.
    发明授权
    Organoaminosilane precursors and methods for depositing films comprising same 有权
    有机氨基硅烷前体及其制备方法

    公开(公告)号：US08912353B2

    公开(公告)日：2014-12-16

    申请号：US13114287

    申请日：2011-05-24

    申请人： Manchao Xiao ,  Mark Leonard O'Neill ,  Heather Regina Bowen ,  Hansong Cheng ,  Xinjian Lei

    发明人： Manchao Xiao ,  Mark Leonard O'Neill ,  Heather Regina Bowen ,  Hansong Cheng ,  Xinjian Lei

    IPC分类号： C07F7/02 ,  C23C16/34 ,  C23C16/40

    CPC分类号： C07F7/025 ,  C23C16/345 ,  C23C16/401

    摘要： Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.

    摘要翻译： 这里描述的是形成介电膜的前体和方法。 一方面，提供了具有下式I的硅前体：其中R 1独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基 C1-C6烷氧基，C1-C6二烷基氨基和吸电子基，n是选自0,1,2,3,4和5的数; R 2独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基，C 1至C 6烷氧基，C 1至C 6二烷基氨基，C 6至 C 10芳基，直链或支链C 1至C 6氟化烷基和C 4至C 10环烷基。

    Organoaminosilane Precursors and Methods for Depositing Films Comprising Same
    6.
    发明申请
    Organoaminosilane Precursors and Methods for Depositing Films Comprising Same 有权
    有机氨硅烷前体和沉积包含它的膜的方法

    公开(公告)号：US20120128897A1

    公开(公告)日：2012-05-24

    申请号：US13114287

    申请日：2011-05-24

    申请人： Manchao Xiao ,  Mark Leonard O'Neill ,  Heather Regina Bowen ,  Hansong Cheng ,  Xinjian Lei

    发明人： Manchao Xiao ,  Mark Leonard O'Neill ,  Heather Regina Bowen ,  Hansong Cheng ,  Xinjian Lei

    IPC分类号： C23C16/44 ,  C23C16/50 ,  C23C16/36 ,  C23C16/40 ,  C07F7/10 ,  C23C16/34

    CPC分类号： C07F7/025 ,  C23C16/345 ,  C23C16/401

    摘要： Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.

    摘要翻译： 这里描述的是形成介电膜的前体和方法。 一方面，提供了具有下式I的硅前体：其中R 1独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基 C1-C6烷氧基，C1-C6二烷基氨基和吸电子基，n是选自0,1,2,3,4和5的数; R 2独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基，C 1至C 6烷氧基，C 1至C 6二烷基氨基，C 6至 C 10芳基，直链或支链C 1至C 6氟化烷基和C 4至C 10环烷基。

    Aminosilanes for Shallow Trench Isolation Films
    7.
    发明申请
    Aminosilanes for Shallow Trench Isolation Films 有权
    氨基硅烷用于浅沟槽隔离膜

    公开(公告)号：US20100009546A1

    公开(公告)日：2010-01-14

    申请号：US12492201

    申请日：2009-06-26

    申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Bing Han ,  Hansong Cheng ,  Manchao Xiao ,  Chia-Chien Lee

    发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Bing Han ,  Hansong Cheng ,  Manchao Xiao ,  Chia-Chien Lee

    IPC分类号： H01L21/3105 ,  H01L21/314 ,  C09D7/00

    CPC分类号： H01L21/3121 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/14 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02282 ,  H01L21/316

    摘要： The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.

    摘要翻译： 本发明是一种用于在氧化条件下用于间隙填充的含二氧化硅的膜的沉积方法，用于在存储器和含逻辑电路的半导体衬底中使用的浅沟槽隔离的高纵横比特征中，例如具有 包含其中的一个或多个集成电路结构，包括以下步骤：提供具有高纵横比特征的半导体衬底; 使半导体衬底与包含低分子量氨基硅烷的液体制剂接触; 通过在半导体衬底上铺展液体制剂形成膜; 在氧化条件下在升高的温度下加热薄膜。 还介绍了这一过程的组成。

    Aminosilanes for shallow trench isolation films
    8.
    发明授权
    Aminosilanes for shallow trench isolation films 有权
    用于浅沟槽隔离膜的氨基硅烷

    公开(公告)号：US07999355B2

    公开(公告)日：2011-08-16

    申请号：US12492201

    申请日：2009-06-26

    申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Bing Han ,  Hansong Cheng ,  Manchao Xiao ,  Chia-Chien Lee

    发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Bing Han ,  Hansong Cheng ,  Manchao Xiao ,  Chia-Chien Lee

    IPC分类号： H01L21/3105

    CPC分类号： H01L21/3121 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/14 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02282 ,  H01L21/316

    摘要： The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.

    摘要翻译： 本发明是一种用于在氧化条件下用于间隙填充的含二氧化硅的膜的沉积方法，用于在存储器和含逻辑电路的半导体衬底中使用的浅沟槽隔离的高纵横比特征中，例如具有 包含其中的一个或多个集成电路结构，包括以下步骤：提供具有高纵横比特征的半导体衬底; 使半导体衬底与包含低分子量氨基硅烷的液体制剂接触; 通过在半导体衬底上铺展液体制剂形成膜; 在氧化条件下在升高的温度下加热薄膜。 还介绍了这一过程的组成。

    Group 4 metal precursors for metal-containing films
    9.
    发明授权
    Group 4 metal precursors for metal-containing films 有权
    用于含金属膜的第4族金属前体

    公开(公告)号：US08952188B2

    公开(公告)日：2015-02-10

    申请号：US12904421

    申请日：2010-10-14

    申请人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Hansong Cheng ,  Daniel P. Spence ,  Moo-Sung Kim

    发明人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Hansong Cheng ,  Daniel P. Spence ,  Moo-Sung Kim

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/455

    CPC分类号： C23C16/18 ,  C07F7/003 ,  C23C16/405 ,  C23C16/45553 ,  Y02P20/582

    摘要： The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

    摘要翻译： 本发明涉及由下式表示的第4族金属前体：M（OR1）2（R2C（O）C（R3）C（O）OR1）2，其中M是Ti，Zr的第4族金属 ，或Hf; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基，优选甲基，乙基或正丙基; R2选自支链C 3-10烷基，优选异丙基，叔丁基，仲丁基，异丁基或叔戊基和C 6-12芳基; R 3选自氢，C 1-10烷基和C 6-12芳基，优选氢。 在本发明的优选实施方案中，前体是熔点低于60℃的液体或固体。

    Materials for adhesion enhancement of copper film on diffusion barriers
    10.
    发明授权
    Materials for adhesion enhancement of copper film on diffusion barriers 失效
    扩散壁上铜膜粘附增强的材料

    公开(公告)号：US07919409B2

    公开(公告)日：2011-04-05

    申请号：US12192603

    申请日：2008-08-15

    申请人： Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

    发明人： Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

    IPC分类号： H01L21/285

    CPC分类号： H01L21/76846

    摘要： We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.

    摘要翻译： 我们使用最先进的计算化学技术来鉴别提供铜种子层对粘合促进层和粘附促进层对阻挡层的良好粘附性的粘附促进层材料。 我们已经确定了在各种金属表面上提供铜层的良好附着力以及发生铜膜附聚的情况的因素。 已经预测了几种基于铬合金的有希望的粘合促进层材料能够显着增强铜膜的粘附性。 已经鉴定了多齿和重铬酸盐的含铬络合物是含铬的前体，以使铬合金化。