公开(公告)号：US08952188B2

公开(公告)日：2015-02-10

申请号：US12904421

申请日：2010-10-14

Applicant: Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Hansong Cheng ,  Daniel P. Spence ,  Moo-Sung Kim

Inventor： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Hansong Cheng ,  Daniel P. Spence ,  Moo-Sung Kim

IPC: C23C16/18 ,  C23C16/40 ,  C23C16/455

CPC classification number: C23C16/18 ,  C07F7/003 ,  C23C16/405 ,  C23C16/45553 ,  Y02P20/582

Abstract: The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

Abstract translation: 本发明涉及由下式表示的第4族金属前体：M（OR1）2（R2C（O）C（R3）C（O）OR1）2，其中M是Ti，Zr的第4族金属 ，或Hf; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基，优选甲基，乙基或正丙基; R2选自支链C 3-10烷基，优选异丙基，叔丁基，仲丁基，异丁基或叔戊基和C 6-12芳基; R 3选自氢，C 1-10烷基和C 6-12芳基，优选氢。 在本发明的优选实施方案中，前体是熔点低于60℃的液体或固体。

公开(公告)号：US07919409B2

公开(公告)日：2011-04-05

申请号：US12192603

申请日：2008-08-15

Applicant: Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

Inventor： Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

IPC: H01L21/285

CPC classification number: H01L21/76846

Abstract: We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.

Abstract translation: 我们使用最先进的计算化学技术来鉴别提供铜种子层对粘合促进层和粘附促进层对阻挡层的良好粘附性的粘附促进层材料。 我们已经确定了在各种金属表面上提供铜层的良好附着力以及发生铜膜附聚的情况的因素。 已经预测了几种基于铬合金的有希望的粘合促进层材料能够显着增强铜膜的粘附性。 已经鉴定了多齿和重铬酸盐的含铬络合物是含铬的前体，以使铬合金化。

公开(公告)号：US20070248754A1

公开(公告)日：2007-10-25

申请号：US11735603

申请日：2007-04-16

Applicant: Xinjian Lei ,  Michael Ulman ,  Liam Quinn ,  Hansong Cheng

Inventor： Xinjian Lei ,  Michael Ulman ,  Liam Quinn ,  Hansong Cheng

IPC: C23C16/00

CPC classification number: C07F9/005 ,  C07F7/003 ,  C23C16/40

Abstract: A plurality of metal-containing complexes of a polydentate beta-ketoiminate, one embodiment of which is represented by the structure are shown: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; wherein R1 is selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, and aryl, having from 1 to 10 carbon atoms; R2 can be from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkylene, fluoroalkyl, cycloaliphatic, and aryl; R4 is an alkylene bridge; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and they can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal M.

Abstract translation: 多结晶β-酮亚胺酸盐的多金属络合物，其一个实施方案由结构表示：其中M是金属如钙，锶，钡，钪，钇，镧，钛，锆，钒 钨，锰，钴，铁，镍，钌，锌，铜，钯，铂，铱，铼，锇; 其中R 1选自具有1至10个碳原子的烷基，氟烷基，脂环族和芳基; R 2可以来自氢，烷基，烷氧基，脂环族和芳基; R 3是直链或支链的，选自亚烷基，氟代烷基，脂环族和芳基; R 4是亚烷基桥; R 5-10各自为直链或支链，选自烷基，氟烷基，脂环族，芳基，并且它们可连接形成含有碳，氧或氮原子的环; n是等于金属M的化合价的整数。

公开(公告)号：US20050118091A1

公开(公告)日：2005-06-02

申请号：US10724848

申请日：2003-12-01

Applicant: Alan Cooper ,  Hansong Cheng ,  Guido Pez

Inventor： Alan Cooper ,  Hansong Cheng ,  Guido Pez

IPC: C01B3/00 ,  C01B31/02 ,  D01F9/12 ,  D01F11/12 ,  C01B3/02

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B3/0021 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/34 ,  C01B2202/36 ,  D01F9/12 ,  D01F11/122 ,  Y02E60/325

Abstract: A material for the storage of hydrogen is provided comprising single wall carbon nanotubes (SWNT), wherein the majority of the diameters of the single wall carbon nanotubes of the assembly range from 0.4 to 1.0 nanometers (nm), and the average length is less than or equal to 1000 nm, or the diameters of the single wall carbon nanotubes of the assembly range from 0.4 to 1.0 nanometers (nm), and the heat (−ΔH) of hydrogen adsorption of the material is within the range from 4 kcal/mole H2 to 8 kcal/mole H2. Processes for the storage and release of hydrogen using the materials are disclosed.

Abstract translation: 提供了用于储存氢的材料，其包括单壁碳纳米管（SWNT），其中组合物的单壁碳纳米管的大部分直径范围为0.4至1.0纳米（nm），平均长度小于 或者等于1000nm，或组合物的单壁碳纳米管的直径范围为0.4至1.0纳米（nm），并且材料的氢吸附的热（-DeltaH）在4kcal /摩尔的范围内 H 2〜8kcal / mole H 2。 公开了使用该材料储存和释放氢的方法。

公开(公告)号：US08912353B2

公开(公告)日：2014-12-16

申请号：US13114287

申请日：2011-05-24

Applicant: Manchao Xiao ,  Mark Leonard O'Neill ,  Heather Regina Bowen ,  Hansong Cheng ,  Xinjian Lei

Inventor： Manchao Xiao ,  Mark Leonard O'Neill ,  Heather Regina Bowen ,  Hansong Cheng ,  Xinjian Lei

IPC: C07F7/02 ,  C23C16/34 ,  C23C16/40

CPC classification number: C07F7/025 ,  C23C16/345 ,  C23C16/401

Abstract: Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.

Abstract translation: 这里描述的是形成介电膜的前体和方法。 一方面，提供了具有下式I的硅前体：其中R 1独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基 C1-C6烷氧基，C1-C6二烷基氨基和吸电子基，n是选自0,1,2,3,4和5的数; R 2独立地选自氢，直链或支链C 1至C 6烷基，直链或支链C 2至C 6烯基，直链或支链C 2至C 6炔基，C 1至C 6烷氧基，C 1至C 6二烷基氨基，C 6至 C 10芳基，直链或支链C 1至C 6氟化烷基和C 4至C 10环烷基。

公开(公告)号：US20110250126A1

公开(公告)日：2011-10-13

申请号：US12904421

申请日：2010-10-14

Applicant: Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Hansong Cheng ,  Daniel P. Spence ,  Moo-Sung Kim

Inventor： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Hansong Cheng ,  Daniel P. Spence ,  Moo-Sung Kim

IPC: C07F7/00 ,  C01G23/047 ,  C07F7/28

CPC classification number: C23C16/18 ,  C07F7/003 ,  C23C16/405 ,  C23C16/45553 ,  Y02P20/582

Abstract: The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

Abstract translation: 本发明涉及由下式表示的第4族金属前体：M（OR1）2（R2C（O）C（R3）C（O）OR1）2，其中M是Ti，Zr的第4族金属 ，或Hf; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基，优选甲基，乙基或正丙基; R2选自支链C 3-10烷基，优选异丙基，叔丁基，仲丁基，异丁基或叔戊基和C 6-12芳基; R 3选自氢，C 1-10烷基和C 6-12芳基，优选氢。 在本发明的优选实施方案中，前体是熔点低于60℃的液体或固体。

公开(公告)号：US07723493B2

公开(公告)日：2010-05-25

申请号：US12245196

申请日：2008-10-03

Applicant: Xinjian Lei ,  Daniel P. Spence ,  Hansong Cheng

Inventor： Xinjian Lei ,  Daniel P. Spence ,  Hansong Cheng

IPC: C23C16/22 ,  C07F5/00 ,  C07F9/00 ,  C07F13/00

CPC classification number: C23C16/18 ,  C07F3/003 ,  C23C16/403 ,  C23C16/404 ,  C23C16/405 ,  C23C16/406

Abstract: Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; R1 is selected from the group consisting of alkyl, alkoxyalkyl, fluoroalkyl, cycloaliphatic, and aryl, having 1 to 10 carbon atoms; R2 is selected from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkyl, alkoxyalkyl, fluoroalkyl, cycloaliphatic, and aryl; R4 is a branched alkylene bridge with at least one chiral center; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal M.

Abstract translation: 三齿β-酮亚胺的金属络合物，其一个实施方案由以下结构表示：其中M是金属如钙，锶，钡，钪，钇，镧，钛，锆，钒，钨，锰， 钴，铁，镍，钌，锌，铜，钯，铂，铱，铼，锇; R1选自具有1-10个碳原子的烷基，烷氧基烷基，氟烷基，脂环族和芳基; R2选自氢，烷基，烷氧基，脂环族和芳基; R3是选自烷基，烷氧基烷基，氟代烷基，脂环族和芳基的直链或支链; R4是具有至少一个手性中心的支链亚烷基桥; R5-6各自为直链或支链，选自烷基，氟烷基，脂环族，芳基，并且可以连接形成含有碳，氧或氮原子的环; n是等于金属M的化合价的整数。

公开(公告)号：US20100009546A1

公开(公告)日：2010-01-14

申请号：US12492201

申请日：2009-06-26

Applicant: Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Bing Han ,  Hansong Cheng ,  Manchao Xiao ,  Chia-Chien Lee

Inventor： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Bing Han ,  Hansong Cheng ,  Manchao Xiao ,  Chia-Chien Lee

IPC: H01L21/3105 ,  H01L21/314 ,  C09D7/00

CPC classification number: H01L21/3121 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/14 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02282 ,  H01L21/316

Abstract: The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.

Abstract translation: 本发明是一种用于在氧化条件下用于间隙填充的含二氧化硅的膜的沉积方法，用于在存储器和含逻辑电路的半导体衬底中使用的浅沟槽隔离的高纵横比特征中，例如具有 包含其中的一个或多个集成电路结构，包括以下步骤：提供具有高纵横比特征的半导体衬底; 使半导体衬底与包含低分子量氨基硅烷的液体制剂接触; 通过在半导体衬底上铺展液体制剂形成膜; 在氧化条件下在升高的温度下加热薄膜。 还介绍了这一过程的组成。

公开(公告)号：US20090136685A1

公开(公告)日：2009-05-28

申请号：US12245196

申请日：2008-10-03

Applicant: Xinjian Lei ,  Daniel P. Spence ,  Hansong Cheng

Inventor： Xinjian Lei ,  Daniel P. Spence ,  Hansong Cheng

IPC: C23C16/513 ,  C23C16/40 ,  C07C211/00 ,  C07F15/00 ,  C07F7/00 ,  C07F7/28

CPC classification number: C23C16/18 ,  C07F3/003 ,  C23C16/403 ,  C23C16/404 ,  C23C16/405 ,  C23C16/406

Abstract: Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; R1 is selected from the group consisting of alkyl, alkoxyalkyl, fluoroalkyl, cycloaliphatic, and aryl, having 1 to 10 carbon atoms; R2 is selected from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkyl, alkoxyalkyl, fluoroalkyl, cycloaliphatic, and aryl; R4 is a branched alkylene bridge with at least one chiral center; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal M.

Abstract translation: 三齿β-酮亚胺的金属络合物，其一个实施方案由以下结构表示：其中M是金属如钙，锶，钡，钪，钇，镧，钛，锆，钒，钨，锰， 钴，铁，镍，钌，锌，铜，钯，铂，铱，铼，锇; R1选自具有1-10个碳原子的烷基，烷氧基烷基，氟烷基，脂环族和芳基; R2选自氢，烷基，烷氧基，脂环族和芳基; R3是选自烷基，烷氧基烷基，氟代烷基，脂环族和芳基的直链或支链; R4是具有至少一个手性中心的支链亚烷基桥; R5-6各自为直链或支链，选自烷基，氟烷基，脂环族，芳基，并且可以连接形成含有碳，氧或氮原子的环; n是等于金属M的化合价的整数。

公开(公告)号：US20090130466A1

公开(公告)日：2009-05-21

申请号：US11941157

申请日：2007-11-16

Applicant: Hansong Cheng ,  Diwakar Garg ,  Pablo Ordejon ,  Manuel Cobian

Inventor： Hansong Cheng ,  Diwakar Garg ,  Pablo Ordejon ,  Manuel Cobian

IPC: B32B15/04 ,  C23C16/18 ,  C07F1/08

CPC classification number: C07F1/005 ,  Y10T428/31678

Abstract: Organometallic precursor complexes containing a metal and ligands containing electron withdrawing groups are disclosed. The complexes are adapted to undergo exothermic adsorption on a fully passivated diffusion barrier layer and on a metal layer deposited on the diffusion barrier layer and to undergo exothermic reduction on the diffusion barrier layer and the metal layer. The metal is preferably copper. Use of the complexes in atomic layer deposition is also disclosed.

Abstract translation: 公开了含金属的有机金属前体络合物和含有吸电子基团的配体。 配合物适于在完全钝化的扩散阻挡层和沉积在扩散阻挡层上的金属层上经受放热吸附并且在扩散阻挡层和金属层上进行放热还原。 金属优选为铜。 还公开了在原子层沉积中使用络合物。