摘要:
An electrical junction box includes a casing, a first installation space, a second installation space, and a connection part arranged in the casing the connection part includes a main body, a first connection end, and a second connection end. The main body is used for connecting to a cable; the first connection end, connected to the main body, is located in the first installation space, and is used for connecting to a contactor; and the second connection end, arranged on the first connection end, is located in the second installation space, and may be used for connecting to a resistance wire. The resistance wire may be connected to the second connection end without passing over the junction box, which is not only advantageous for fastening and installing the junction box, but also facilitates the connection and installation of the cable.
摘要:
The present invention discloses a method for quick and simultaneous determination of 16 inorganic anions and organic acids in tobacco by ion chromatography The retention behavior of inorganic anions and organic acids on the anion exchange column was investigated using potassium hydroxide produced by EGC-II KOH eluent autogenerator as eluent. The optimized gradient elution condition was obtained. The samples were prepared through extraction, filtration and dilution before analysis. The separation was performed on an anion exchange column. The time of the gradient elution program was 50 mins. Under the optimized conditions, the calibration of peak area for all the analytes were linear in the ranges of 105. The method in the present invention has the advantages of simplicity, rapidity and accuracy, and is able to simultaneously determine 16 inorganic anions and organic acids in tobacco by one single time of injection.
摘要:
Disclosed are a pixel structure and a corresponding liquid crystal display device. The pixel structure comprises a plurality of pixel electrodes, a plurality of data lines, a plurality of scan lines, and a plurality of common electrodes. The common electrodes are disposed in a plurality of first metal trunk areas corresponding to a plurality of pixel electrode vertical trunk areas of trunk electrodes and/or gap areas between two adjacent pixel areas of a first metal layer. The pixel structure and the corresponding liquid crystal display device of the present invention are capable of increasing an aperture ratio of the pixel structure.
摘要:
This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R1nR2mSi(NR3R4)4-n-m; and, a cyclic silazane of (R1R2SiNR3)p, where R1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R2, R3, and R4 are selected from H, alkyl with C1-C10, linear, branched, or cyclic, an alkenyl with C2-C10 linear, branched, or cyclic, and aromatic; n=1-3, m=0-2; p=3-4.
摘要翻译:本发明涉及使用热CVD法,ALD法或循环CVD法在HF溶液中具有非常低的湿蚀刻速率的二氧化硅膜的方法,其中硅前体选自以下之一:R1nR2mSi(NR3R4)4-nm ; 和(R 1 R 2 SiNR 3)p的环状硅氮烷,其中R 1是烯基或芳族,例如乙烯基,烯丙基和苯基; R2,R3和R4选自H为具有C1-C10,直链,支链或环状的烷基,具有C2-C10直链,支链或环状和芳族的烯基; n = 1-3,m = 0-2; p = 3-4。
摘要:
Described herein are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.
摘要:
Rare earth-activated aluminum nitride powders are made using a solution-based approach to form a mixed hydroxide of aluminum and a rare earth metal, the mixed hydroxide is then converted into an ammonium metal fluoride, preferably a rare earth-substituted ammonium aluminum hexafluoride ((NH4)3Al1-xRExF6), and finally the rare earth-activated aluminum nitride is formed by ammonolysis of the ammonium metal fluoride at a high temperature. The use of a fluoride precursor in this process avoids sources of oxygen during the final ammonolysis step which is a major source of defects in the powder synthesis of nitrides. Also, because the aluminum nitride is formed from a mixed hydroxide co-precipitate, the distribution of the dopants in the powder is substantially homogeneous in each particle.
摘要:
This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
摘要:
Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.
摘要:
Rare earth-activated aluminum nitride powders are made using a solution-based approach to form a mixed hydroxide of aluminum and a rare earth metal, the mixed hydroxide is then converted into an ammonium metal fluoride, preferably a rare earth-substituted ammonium aluminum hexafluoride ((NH4)3Al1-xRExF6), and finally the rare earth-activated aluminum nitride is formed by ammonolysis of the ammonium metal fluoride at a high temperature. The use of a fluoride precursor in this process avoids sources of oxygen during the final ammonolysis step which is a major source of defects in the powder synthesis of nitrides. Also, because the aluminum nitride is formed from a mixed hydroxide co-precipitate, the distribution of the dopants in the powder is substantially homogeneous in each particle.
摘要:
A method for processing speech data includes obtaining a pitch and at least one formant frequency for each of a plurality of first speech data; constructing a first feature space with the obtained fundamental frequencies and formant frequencies as features; and classifying the plurality pieces of first speech data using the first feature space, and thus a plurality of speech data classes and the corresponding description are obtained.