发明申请
- 专利标题： Apparatus and Method for Reducing Dark Current in Image Sensors
- 专利标题（中）： 降低图像传感器暗电流的装置和方法
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申请号： US13436364申请日： 2012-03-30
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公开(公告)号： US20130193540A1公开(公告)日： 2013-08-01
- 发明人: Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
- 申请人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232 ; H01L31/0216
摘要：
A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a backside of the backside illuminated image sensor wafer, depositing a plasma enhanced passivation layer on the first passivation layer and depositing a second passivation layer on the plasma enhanced passivation layer.
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