A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The active layer is located between the n-type and p-type semiconductor layers, and includes multiple quantum barrier layers and quantum wells located between any two quantum barrier layers. A lattice constant of the quantum barrier layer closest to the p-type semiconductor layer is a1. The interlayer is located between and in contact with the active layer and the p-type semiconductor layer, wherein a lattice constant of the interlayer is a2. The electron barrier layer is located between the interlayer and the p-type semiconductor layer, wherein a lattice constant of the electron barrier layer is a3, and a2 is not equal to a1 or a3. The first and second electrodes are respectively located on the n-type and p-type semiconductor layers.