-
公开(公告)号：US20180052115A1
公开(公告)日：2018-02-22
申请号：US15382748
申请日：2016-12-19
Applicant: Industrial Technology Research Institute
Inventor： Tzung-Te Chen , Hsueh-Hsing Liu , Chun-Wen Chu , Yi-Keng Fu
CPC classification number: G01N21/8422 , G01B11/24 , G01N2021/8427 , H01L22/12
Abstract: An apparatus for measuring a curvature of a thin film includes a light emitting module, a first optical module, a second optical module, a third optical module, and an image analysis module. The light emitting module emits a single laser to be used as an incident light. The incident light is transmitted through a first optical path provided by the first optical module, then the incident light is guided by the second optical module to be incident to the thin film through a second optical path. A reflected light reflected by the thin film is transmitted through the second optical path, then guided by the third optical module to be transmitted along a third optical path. The image analysis module determines the curvature of the thin film according to the characteristic of the reflected light.
-
公开(公告)号：US09048389B2
公开(公告)日：2015-06-02
申请号：US14033527
申请日：2013-09-23
Applicant: Industrial Technology Research Institute
Inventor： Yi-Keng Fu , Chih-Wei Hu
Abstract: A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, a first and second electrodes is provided. The active layer is located between the n-type and p-type semiconductor layers, and includes i quantum wells and (i+1) quantum barrier layers, each quantum well is located between any two of the quantum barrier layers, each of k quantum wells among the i quantum wells is constituted of a light emitting layer and an auxiliary layer, in which an indium concentration of the auxiliary layer is greater than an indium concentration of the light emitting layer, where i and k are natural numbers greater than or equal to 1 and k≦i. The first electrode and second electrodes are located on the n-type semiconductor layer and the p-type semiconductor layer, respectively.
Abstract translation: 提供了包括基板，p型和n型半导体层，有源层，第一和第二电极的发光二极管。 有源层位于n型和p型半导体层之间，包括i量子阱和（i + 1）量子势垒层，每个量子阱位于任何两个量子势垒层之间，每个量子阱 i量子阱中的阱由发光层和辅助层构成，其中辅助层的铟浓度大于发光层的铟浓度，其中i和k是大于或等于的自然数 到1和k＆nlE; i。 第一电极和第二电极分别位于n型半导体层和p型半导体层上。
-
公开(公告)号：US09130122B2
公开(公告)日：2015-09-08
申请号：US14181738
申请日：2014-02-17
Inventor： Yi-Keng Fu , Chia-Lung Tsai , Hung-Tse Chen , Chih-Hsuen Chou
CPC classification number: H01L33/325 , H01L33/025 , H01L33/22
Abstract: A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E18/cm3 to 1E20/cm3 at an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.
Abstract translation: 提供了包括第一类掺杂GaN衬底，第一类型掺杂半导体层，有源层，第二类型半导体层，第一电极和第二电极的发光二极管（LED）。 第一掺杂GaN衬底具有第一掺杂元素。 第一类型半导体层设置在第一种掺杂的GaN衬底上。 第一类型半导体层具有与第一掺杂元素不同的第二掺杂元素，并且第二掺杂元素的掺杂浓度可以在第一掺杂GaN的界面处具有3E18 / cm3至1E20 / cm3的峰值 衬底和第一类半导体层。 有源层设置在第一型半导体层上，第二类型半导体层设置在有源层上。 第一电极和第二电极分别设置在第一型掺杂GaN衬底和第二类型半导体层上。 还提供其他LED。
-
公开(公告)号：US08779468B2
公开(公告)日：2014-07-15
申请号：US13726648
申请日：2012-12-26
Applicant: Industrial Technology Research Institute
Inventor： Yen-Hsiang Fang , Chien-Pin Lu , Chen-Zi Liao , Rong Xuan , Yi-Keng Fu , Chih-Wei Hu , Hsun-Chih Liu
IPC: H01L21/02
CPC classification number: H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L29/267
Abstract: A nitride semiconductor structure including a silicon substrate, a nucleation layer, a discontinuous defect blocking layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate, wherein the nucleation layer has a defect density d1. A portion of the nucleation layer is covered by the discontinuous defect blocking layer. The buffer layer is disposed on the discontinuous defect blocking layer and a portion of the nucleation layer that is not covered by the discontinuous defect blocking layer. The nitride semiconductor layer is disposed on the buffer layer. A ratio of a defect density d2 of the nitride semiconductor layer to the defect density d1 of the nucleation layer is less than or equal to about 0.5, at a location where about 1 micrometer above the interface between the nitride semiconductor layer and the buffer layer.
Abstract translation: 提供了包括硅衬底，成核层，不连续缺陷阻挡层，缓冲层和氮化物半导体层的氮化物半导体结构。 成核层设置在硅基板上，其中成核层具有缺陷密度d1。 成核层的一部分被不连续的缺陷阻挡层覆盖。 缓冲层设置在不连续缺陷阻挡层和未被不连续缺陷阻挡层覆盖的成核层的一部分。 氮化物半导体层设置在缓冲层上。 在氮化物半导体层和缓冲层之间的界面上方约1微米的位置处，氮化物半导体层的缺陷密度d2与成核层的缺陷密度d1的比率小于或等于约0.5。
-
公开(公告)号：US09970880B2
公开(公告)日：2018-05-15
申请号：US15382748
申请日：2016-12-19
Applicant: Industrial Technology Research Institute
Inventor： Tzung-Te Chen , Hsueh-Hsing Liu , Chun-Wen Chu , Yi-Keng Fu
CPC classification number: G01N21/8422 , G01B11/24 , G01N2021/8427 , H01L22/12
Abstract: An apparatus for measuring a curvature of a thin film includes a light emitting module, a first optical module, a second optical module, a third optical module, and an image analysis module. The light emitting module emits a single laser to be used as an incident light. The incident light is transmitted through a first optical path provided by the first optical module, then the incident light is guided by the second optical module to be incident to the thin film through a second optical path. A reflected light reflected by the thin film is transmitted through the second optical path, then guided by the third optical module to be transmitted along a third optical path. The image analysis module determines the curvature of the thin film according to the characteristic of the reflected light.
-
Patent Agency Ranking
公开(公告)号：US20150137332A1
公开(公告)日：2015-05-21
申请号：US14583780
申请日：2014-12-29
Applicant: Industrial Technology Research Institute
Inventor： Yi-Keng Fu , Rong Xuan , Hsun-Chih Liu
CPC classification number: H01L33/642 , H01L33/002 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/20 , H01L33/22 , Y10T428/24562
Abstract: A carrier for carrying a semiconductor layer having a growth surface and at least one nano-patterned structure on the growth surface is provided. The at least one nano-patterned structure on the growth surface of the carrier has a plurality of mesas, a recess is formed between two adjacent mesas, in which a depth of the recess ranges from 10 nm to 500 nm, and a dimension of the mesa ranges from 10 nm to 800 nm.
Abstract translation: 提供了用于在生长表面上承载具有生长表面和至少一个纳米图案结构的半导体层的载体。 在载体的生长表面上的至少一个纳米图案结构具有多个台面，在两个相邻的台面之间形成凹部，其中凹部的深度范围为10nm至500nm， 台面范围为10nm至800nm。
-
公开(公告)号：US20150069321A1
公开(公告)日：2015-03-12
申请号：US14181738
申请日：2014-02-17
Inventor： Yi-Keng Fu , Chia-Lung Tsai , Hung-Tse Chen , Chih-Hsuen Chou
IPC: H01L33/06
CPC classification number: H01L33/325 , H01L33/025 , H01L33/22
Abstract: A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E18/cm3 to 1E20/cm3 at an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.
Abstract translation: 提供了包括第一类掺杂GaN衬底，第一类型掺杂半导体层，有源层，第二类型半导体层，第一电极和第二电极的发光二极管（LED）。 第一掺杂GaN衬底具有第一掺杂元素。 第一类型半导体层设置在第一种掺杂的GaN衬底上。 第一类型半导体层具有与第一掺杂元素不同的第二掺杂元素，并且第二掺杂元素的掺杂浓度可以在第一掺杂GaN的界面处具有3E18 / cm3至1E20 / cm3的峰值 衬底和第一类半导体层。 有源层设置在第一型半导体层上，第二类型半导体层设置在有源层上。 第一电极和第二电极分别设置在第一型掺杂GaN衬底和第二类型半导体层上。 还提供其他LED。
-
公开(公告)号：US10517975B2
公开(公告)日：2019-12-31
申请号：US15826690
申请日：2017-11-30
Applicant: Industrial Technology Research Institute
Inventor： Chien-Chun Lu , Chen-Peng Hsu , Yi-Keng Fu , Chia-Fen Hsieh
Abstract: A light source apparatus comprises a main body, a plurality of light source modules and a processor. The main body includes a plurality of configuration areas distributed on a surface of the main body. The plurality of configuration areas is oriented towards different directions, respectively. The plurality of light source modules is located in the plurality of configuration areas, respectively. Each of the plurality of light source modules includes a circuit substrate and an ultraviolet emitting device. The processor is electrically connected to the plurality of light source modules. The processor is adapted to drive the ultraviolet emitting device of each of the plurality of light source modules. A method of using a light source apparatus is also provided.
-
公开(公告)号：US10074533B1
公开(公告)日：2018-09-11
申请号：US15723390
申请日：2017-10-03
Applicant: Industrial Technology Research Institute
Inventor： Po-Chun Yeh , Kan-Hsueh Tsai , Chuan-Wei Tsou , Heng-Yuan Lee , Hsueh-Hsing Liu , Han-Chieh Ho , Yi-Keng Fu
IPC: H01L21/02 , H01L29/06 , H01L29/267 , H01L29/16 , H01L29/20
CPC classification number: H01L21/02035 , H01L21/02381 , H01L21/0243 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L29/0657 , H01L29/16 , H01L29/2003 , H01L29/267
Abstract: This disclosure provides an epitaxial wafer, which includes: a silicon wafer having a central area and an extremity area enclosing the central area, the extremity area having a stepped profile; and an nitride epitaxial layer formed on the silicon wafer; wherein, the stepped profile has a width between 10 and 1500 μm and a height between 1 and 500 μm.
-
公开(公告)号：US20180194645A1
公开(公告)日：2018-07-12
申请号：US15869101
申请日：2018-01-12
Inventor： Chen-Peng Hsu , Cheng-Da Shaw , Chien-Chun Lu , Yi-Keng Fu , Hung-Ming Wu
CPC classification number: C02F1/32 , C02F1/002 , C02F2201/326 , C02F2303/04 , C02F2307/02
Abstract: A purifying device including a container, at least one cover, a sensing assembly and an ultraviolet source is provided. The container has a containing space, wherein the containing space is adapted to contain a liquid. The cover is adapted to be connected to the container to cover the containing space. The sensing assembly is disposed on the cover, wherein the sensing assembly is adapted to sense a usage state of the cover. The ultraviolet source is disposed on the cover and is adapted to generate an ultraviolet emitted to outside of the cover, wherein the ultraviolet source is turned on or turned off according the usage state of the cover.
-
-
-
-
-
-
-
-
-
Search Results
20
records
(took 0.014 seconds)
