公开(公告)号：US09680051B2

公开(公告)日：2017-06-13

申请号：US14265371

申请日：2014-04-30

Applicant: Industrial Technology Research Institute

Inventor： Yi-Keng Fu ,  Yu-Hsuan Lu

IPC: H01L33/06 ,  H01L33/04

CPC classification number: H01L33/06 ,  H01L33/04

Abstract: A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×107/cm2. The active layer is disposed between the n-type and p-type semiconductor layers. The wavelength of light emitted by the active layer is λ, and 222 nm≦λ≦405 nm. The active layer includes i quantum barrier layers and (i−1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i≧2. N-type dopant is doped in at least k layers of the i quantum barrier layers, wherein k is a natural number and k≧1, when i even, k≧i/2, and when i is odd, k≧(i−1)/2.

公开(公告)号：US20140231747A1

公开(公告)日：2014-08-21

申请号：US14265371

申请日：2014-04-30

Applicant: Industrial Technology Research Institute

Inventor： Yi-Keng Fu ,  Yu-Hsuan Lu

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/04

Abstract: A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×107/cm3. The active layer is disposed between the n-type and p-type semiconductor layers. The wavelength of light emitted by the active layer is λ, and 222 nm≦λ≦405 nm. The active layer includes i quantum barrier layers and (i−1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i≧2. N-type dopant is doped in at least k layers of the i quantum barrier layers, wherein k is a natural number and k≧1, when i even, k≧i/2, and when i is odd, k≧(i−1)/2.

Abstract translation: 提供了包括基板，p型和n型半导体层，有源层，中间层，电子势垒层，第一和第二电极的发光二极管。 n型半导体层设置在蓝宝石衬底上。 有源层具有大于或等于2×107 / cm3的缺陷密度的有源区。 有源层设置在n型和p型半导体层之间。 由有源层发射的光的波长为λ，并且为222nm＆nlE;λ＆nlE; 405nm。 有源层包括i量子势垒层和（i-1）量子阱，每个量子阱设置在任何两个量子势垒层之间，i≥2。 在i个量子势垒层的至少k个层中掺杂N型掺杂剂，其中k是自然数，k≥1，当i even，k≥i/ 2，当i是奇数时，k≥（i- 1）/ 2。

公开(公告)号：US20130228743A1

公开(公告)日：2013-09-05

申请号：US13727619

申请日：2012-12-27

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Yi-Keng Fu ,  Yu-Hsuan Lu

IPC: H01L33/04

CPC classification number: H01L33/06 ,  H01L33/04

Abstract: A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The active layer is located between the n-type and p-type semiconductor layers, and includes multiple quantum barrier layers and quantum wells located between any two quantum barrier layers. A lattice constant of the quantum barrier layer closest to the p-type semiconductor layer is a1. The interlayer is located between and in contact with the active layer and the p-type semiconductor layer, wherein a lattice constant of the interlayer is a2. The electron barrier layer is located between the interlayer and the p-type semiconductor layer, wherein a lattice constant of the electron barrier layer is a3, and a2 is not equal to a1 or a3. The first and second electrodes are respectively located on the n-type and p-type semiconductor layers.

Abstract translation: 提供了包括基板，p型和n型半导体层，有源层，中间层，电子势垒层，第一和第二电极的发光二极管。 有源层位于n型和p型半导体层之间，并且包括位于任何两个量子势垒层之间的多个量子势垒层和量子阱。 最靠近p型半导体层的量子势垒层的晶格常数为a1。 中间层位于活性层和p型半导体层之间并与之接触，其中层间的晶格常数为a2。 电子势垒层位于中间层和p型半导体层之间，其中电子势垒层的晶格常数为a3，a2不等于a1或a3。 第一和第二电极分别位于n型和p型半导体层上。