- 专利标题: MASK AND METHOD FOR FORMING THE SAME
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申请号: US13451767申请日: 2012-04-20
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公开(公告)号: US20130280644A1公开(公告)日: 2013-10-24
- 发明人: Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
- 申请人: Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G03F1/48
- IPC分类号: G03F1/48 ; G03F1/26 ; G03F1/30 ; G03F1/22
摘要:
A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.
公开/授权文献
- US08974988B2 Mask and method for forming the same 公开/授权日:2015-03-10