发明申请
- 专利标题： Semiconductor Device Including A Silicate Glass Structure and Method of Manufacturing A Semiconductor Device
- 专利标题（中）： 包括硅酸盐玻璃结构的半导体器件和制造半导体器件的方法
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申请号： US13473231申请日： 2012-05-16
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公开(公告)号： US20130307127A1公开(公告)日： 2013-11-21
- 发明人: Hans-Joachim Schulze , Alexander Susiti , Markus Zundel , Reinhard Ploss
- 申请人： Hans-Joachim Schulze , Alexander Susiti , Markus Zundel , Reinhard Ploss
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/311
摘要：
A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area.
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