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1.发明申请Semiconductor Device Including A Silicate Glass Structure and Method of Manufacturing A Semiconductor Device 有权包括硅酸盐玻璃结构的半导体器件和制造半导体器件的方法公开(公告)号：US20130307127A1
公开(公告)日：2013-11-21
申请号：US13473231
申请日：2012-05-16
IPC分类号： H01L29/06 , H01L21/311
CPC分类号： H01L29/7813 , H01L21/02123 , H01L21/02129 , H01L21/02321 , H01L21/26506 , H01L21/283 , H01L21/3115 , H01L21/31155 , H01L23/291 , H01L23/3171 , H01L29/06 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/4916 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area.
摘要翻译： 半导体器件包括具有第一表面的半导体本体。 半导体器件还包括在第一表面上的连续硅酸盐玻璃结构。 在半导体主体的有源区域上的连续玻璃结构的第一部分包括掺杂剂的第一组合物，其不同于连续玻璃结构的第二部分中的掺杂剂的第二组成，在半导体主体的在活性物外部的区域上 区。
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2.发明授权Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device 有权包括硅酸盐玻璃结构的半导体器件和半导体器件的制造方法公开(公告)号：US08785997B2
公开(公告)日：2014-07-22
申请号：US13473231
申请日：2012-05-16
IPC分类号： H01L27/108 , H01L29/78 , H01L29/10 , H01L29/06 , H01L29/423
CPC分类号： H01L29/7813 , H01L21/02123 , H01L21/02129 , H01L21/02321 , H01L21/26506 , H01L21/283 , H01L21/3115 , H01L21/31155 , H01L23/291 , H01L23/3171 , H01L29/06 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/4916 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area.
摘要翻译： 半导体器件包括具有第一表面的半导体本体。 半导体器件还包括在第一表面上的连续硅酸盐玻璃结构。 在半导体主体的有源区域上的连续玻璃结构的第一部分包括掺杂剂的第一组合物，其不同于连续玻璃结构的第二部分中的掺杂剂的第二组成，在半导体主体的在活性物外部的区域上 区。
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3.发明授权Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor device 有权包括半导体衬底中的沟槽的半导体器件和制造半导体器件的方法公开(公告)号：US09219144B2
公开(公告)日：2015-12-22
申请号：US13571455
申请日：2012-08-10
IPC分类号： H01L29/06 , H01L29/78 , H01L23/36 , H01L29/417 , H01L29/66 , H01L23/00 , H01L21/74 , H01L21/225 , H01L21/324 , H01L29/45 , H01L29/08
CPC分类号： H01L29/4236 , H01L21/2225 , H01L21/2251 , H01L21/2254 , H01L21/2255 , H01L21/2257 , H01L21/28079 , H01L21/30604 , H01L21/324 , H01L21/3247 , H01L21/743 , H01L23/36 , H01L24/05 , H01L29/0653 , H01L29/0657 , H01L29/0878 , H01L29/1079 , H01L29/167 , H01L29/41741 , H01L29/41766 , H01L29/456 , H01L29/4958 , H01L29/66333 , H01L29/66348 , H01L29/66666 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L29/7827 , H01L2224/05009 , H01L2224/05078 , H01L2224/0557 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a semiconductor substrate. A first trench extends into or through the semiconductor substrate from a first side. A semiconductor layer adjoins the semiconductor substrate at the first side. The semiconductor layer caps the first trench at the first side. The semiconductor device further includes a contact at a second side of the semiconductor substrate opposite to the first side.
摘要翻译： 半导体器件包括半导体衬底。 第一沟槽从第一侧延伸进入或穿过半导体衬底。 半导体层在第一侧邻接半导体衬底。 半导体层在第一侧覆盖第一沟槽。 半导体器件还包括在与第一侧相对的半导体衬底的第二侧的接触。
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4.发明申请SEMICONDUCTOR DEVICE INCLUDING A TRENCH IN A SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权在半导体衬底中包括铁素体的半导体器件和制造半导体器件的方法公开(公告)号：US20140042593A1
公开(公告)日：2014-02-13
申请号：US13571455
申请日：2012-08-10
IPC分类号： H01L29/06 , H01L21/225 , H01L29/36
CPC分类号： H01L29/4236 , H01L21/2225 , H01L21/2251 , H01L21/2254 , H01L21/2255 , H01L21/2257 , H01L21/28079 , H01L21/30604 , H01L21/324 , H01L21/3247 , H01L21/743 , H01L23/36 , H01L24/05 , H01L29/0653 , H01L29/0657 , H01L29/0878 , H01L29/1079 , H01L29/167 , H01L29/41741 , H01L29/41766 , H01L29/456 , H01L29/4958 , H01L29/66333 , H01L29/66348 , H01L29/66666 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L29/7827 , H01L2224/05009 , H01L2224/05078 , H01L2224/0557 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a semiconductor substrate. A first trench extends into or through the semiconductor substrate from a first side. A semiconductor layer adjoins the semiconductor substrate at the first side. The semiconductor layer caps the first trench at the first side. The semiconductor device further includes a contact at a second side of the semiconductor substrate opposite to the first side.
摘要翻译： 半导体器件包括半导体衬底。 第一沟槽从第一侧延伸进入或穿过半导体衬底。 半导体层在第一侧邻接半导体衬底。 半导体层在第一侧覆盖第一沟槽。 半导体器件还包括在与第一侧相对的半导体衬底的第二侧的接触。
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5.发明授权公开(公告)号：US06646304B1
公开(公告)日：2003-11-11
申请号：US09688922
申请日：2000-10-16
申请人： Jenö Tihanyi , Reinhard Ploss
发明人： Jenö Tihanyi , Reinhard Ploss
IPC分类号： H01L2976
CPC分类号： H01L29/0634 , H01L21/187 , H01L21/22 , H01L21/261 , H01L21/26513 , H01L29/0623 , H01L29/167 , H01L29/402 , H01L29/66136 , H01L29/6634 , H01L29/7396 , H01L29/744 , H01L29/7811 , H01L29/8613 , H01L2924/0002 , H01L2924/00
摘要： A universal semiconductor wafer for high-voltage semiconductor components includes at least one layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type. A plurality of floating semiconductor zones of a second, opposite conductivity type are embedded in the interface region between the semiconductor substrate and the at least one layer. The floating semiconductor zones are dimensioned such that the dimension of a semiconductor zone is do small compared to the layer thickness of the at least one semiconductor layer and is essentially equal to or less than a distance between the floating semiconductor zones in the interface region.
摘要翻译： 用于高压半导体部件的通用半导体晶片包括设置在第一导电类型的半导体衬底上的至少一层第一导电类型。 具有第二相反导电类型的多个浮动半导体区域被嵌入在半导体衬底和至少一个层之间的界面区域中。 浮动半导体区的尺寸使得半导体区的尺寸比至少一个半导体层的层厚度小，并且基本上等于或小于界面区域中的浮动半导体区之间的距离。
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公开(公告)号：US20100264523A1
公开(公告)日：2010-10-21
申请号：US12828327
申请日：2010-07-01
申请人： Adolf Koller , Horst Theuss , Ralf Otremba , Josef Hoeglauer , Helmut Strack , Reinhard Ploss
发明人： Adolf Koller , Horst Theuss , Ralf Otremba , Josef Hoeglauer , Helmut Strack , Reinhard Ploss
IPC分类号： H01L23/552 , H01L23/485
CPC分类号： H01L23/552 , H01L23/3114 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/82 , H01L24/97 , H01L2224/05001 , H01L2224/05022 , H01L2224/05147 , H01L2224/05572 , H01L2224/05647 , H01L2224/16225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/92244 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/12041 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/19107 , H01L2924/3025 , H01L2224/82 , H01L2924/00 , H01L2224/45099
摘要： A panel has a baseplate with an upper first metallic layer and a multiplicity of a vertical semiconductor components. The vertical semiconductor components in each case have a first side with a first load electrode and a control electrode and an opposite second side with a second load electrode. The second side of the semiconductor components is in each case mounted on the metallic layer of the baseplate. The semiconductor components are arranged in such a way that edge sides of adjacent semiconductor components are separated from one another. A second metallic layer is arranged in separating regions between the semiconductor components.
摘要翻译： 面板具有具有上部第一金属层和多个垂直半导体部件的基板。 每种情况下的垂直半导体部件具有第一侧，其具有第一负载电极和控制电极，而第二侧具有第二负载电极。 半导体部件的第二面分别安装在基板的金属层上。 半导体部件被配置成使得相邻的半导体部件的边缘彼此分离。 第二金属层布置在半导体部件之间的分离区域中。
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公开(公告)号：US08164173B2
公开(公告)日：2012-04-24
申请号：US12828327
申请日：2010-07-01
申请人： Adolf Koller , Horst Theuss , Ralf Otremba , Josef Hoeglauer , Helmut Strack , Reinhard Ploss
发明人： Adolf Koller , Horst Theuss , Ralf Otremba , Josef Hoeglauer , Helmut Strack , Reinhard Ploss
IPC分类号： H01L23/48
CPC分类号： H01L23/552 , H01L23/3114 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/82 , H01L24/97 , H01L2224/05001 , H01L2224/05022 , H01L2224/05147 , H01L2224/05572 , H01L2224/05647 , H01L2224/16225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/92244 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/12041 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/19107 , H01L2924/3025 , H01L2224/82 , H01L2924/00 , H01L2224/45099
摘要： A panel has a baseplate with an upper first metallic layer and a multiplicity of a vertical semiconductor components. The vertical semiconductor components in each case have a first side with a first load electrode and a control electrode and an opposite second side with a second load electrode. The second side of the semiconductor components is in each case mounted on the metallic layer of the baseplate. The semiconductor components are arranged in such a way that edge sides of adjacent semiconductor components are separated from one another. A second metallic layer is arranged in separating regions between the semiconductor components.
摘要翻译： 面板具有具有上部第一金属层和多个垂直半导体部件的基板。 每种情况下的垂直半导体部件具有第一侧，其具有第一负载电极和控制电极，而第二侧具有第二负载电极。 半导体部件的第二面分别安装在基板的金属层上。 半导体部件被配置成使得相邻的半导体部件的边缘彼此分离。 第二金属层布置在半导体部件之间的分离区域中。
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公开(公告)号：US07772693B2
公开(公告)日：2010-08-10
申请号：US11677774
申请日：2007-02-22
申请人： Adolf Koller , Horst Theuss , Ralf Otremba , Josef Hoeglauer , Helmut Strack , Reinhard Ploss
发明人： Adolf Koller , Horst Theuss , Ralf Otremba , Josef Hoeglauer , Helmut Strack , Reinhard Ploss
IPC分类号： H01L23/34
CPC分类号： H01L23/552 , H01L23/3114 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/82 , H01L24/97 , H01L2224/05001 , H01L2224/05022 , H01L2224/05147 , H01L2224/05572 , H01L2224/05647 , H01L2224/16225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/92244 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/12041 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/19107 , H01L2924/3025 , H01L2224/82 , H01L2924/00 , H01L2224/45099
摘要： A panel has a baseplate with an upper first metallic layer and a multiplicity of a vertical semiconductor components. The vertical semiconductor components in each case have a first side with a first load electrode and a control electrode and an opposite second side with a second load electrode. The second side of the semiconductor components is in each case mounted on the metallic layer of the baseplate. The semiconductor components are arranged in such a way that edge sides of adjacent semiconductor components are separated from one another. A second metallic layer is arranged in separating regions between the semiconductor components.
摘要翻译： 面板具有具有上部第一金属层和多个垂直半导体部件的基板。 每种情况下的垂直半导体部件具有第一侧，其具有第一负载电极和控制电极，而第二侧具有第二负载电极。 半导体部件的第二面分别安装在基板的金属层上。 半导体部件被配置成使得相邻的半导体部件的边缘彼此分离。 第二金属层布置在半导体部件之间的分离区域中。
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公开(公告)号：US20080191359A1
公开(公告)日：2008-08-14
申请号：US11677774
申请日：2007-02-22
申请人： Adolf Koller , Horst Theuss , Ralf Otremba , Josef Hoeglauer , Helmut Strack , Reinhard Ploss
发明人： Adolf Koller , Horst Theuss , Ralf Otremba , Josef Hoeglauer , Helmut Strack , Reinhard Ploss
CPC分类号： H01L23/552 , H01L23/3114 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/82 , H01L24/97 , H01L2224/05001 , H01L2224/05022 , H01L2224/05147 , H01L2224/05572 , H01L2224/05647 , H01L2224/16225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/92244 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/12041 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/19107 , H01L2924/3025 , H01L2224/82 , H01L2924/00 , H01L2224/45099
摘要： A panel has a baseplate with an upper first metallic layer and a multiplicity of a vertical semiconductor components. The vertical semiconductor components in each case have a first side with a first load electrode and a control electrode and an opposite second side with a second load electrode. The second side of the semiconductor components is in each case mounted on the metallic layer of the baseplate. The semiconductor components are arranged in such a way that edge sides of adjacent semiconductor components are separated from one another. A second metallic layer is arranged in separating regions between the semiconductor components.
摘要翻译： 面板具有具有上部第一金属层和多个垂直半导体部件的基板。 每种情况下的垂直半导体部件具有第一侧，其具有第一负载电极和控制电极，而第二侧具有第二负载电极。 半导体部件的第二面分别安装在基板的金属层上。 半导体部件被配置成使得相邻的半导体部件的边缘彼此分离。 第二金属层布置在半导体部件之间的分离区域中。
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