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    Universal semiconductor wafer for high-voltage semiconductor components
    1.
    发明授权
    Universal semiconductor wafer for high-voltage semiconductor components 失效
    用于高压半导体元件的通用半导体晶圆

    公开(公告)号：US06646304B1

    公开(公告)日：2003-11-11

    申请号：US09688922

    申请日：2000-10-16

    申请人： Jenö Tihanyi ,  Reinhard Ploss

    发明人： Jenö Tihanyi ,  Reinhard Ploss

    IPC分类号： H01L2976

    CPC分类号： H01L29/0634 ,  H01L21/187 ,  H01L21/22 ,  H01L21/261 ,  H01L21/26513 ,  H01L29/0623 ,  H01L29/167 ,  H01L29/402 ,  H01L29/66136 ,  H01L29/6634 ,  H01L29/7396 ,  H01L29/744 ,  H01L29/7811 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A universal semiconductor wafer for high-voltage semiconductor components includes at least one layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type. A plurality of floating semiconductor zones of a second, opposite conductivity type are embedded in the interface region between the semiconductor substrate and the at least one layer. The floating semiconductor zones are dimensioned such that the dimension of a semiconductor zone is do small compared to the layer thickness of the at least one semiconductor layer and is essentially equal to or less than a distance between the floating semiconductor zones in the interface region.

    摘要翻译： 用于高压半导体部件的通用半导体晶片包括设置在第一导电类型的半导体衬底上的至少一层第一导电类型。 具有第二相反导电类型的多个浮动半导体区域被嵌入在半导体衬底和至少一个层之间的界面区域中。 浮动半导体区的尺寸使得半导体区的尺寸比至少一个半导体层的层厚度小，并且基本上等于或小于界面区域中的浮动半导体区之间的距离。