Invention Application
- Patent Title: PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
- Patent Title (中): 等离子体加工设备和等离子体处理方法
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Application No.: US13743367Application Date: 2013-01-17
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Publication No.: US20140057445A1Publication Date: 2014-02-27
- Inventor: Michikazu MORIMOTO , Yasuo OHGOSHI , Yuuzou OOHIRABARU , Tetsuo ONO
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2012-184847 20120824
- Main IPC: H01L21/3065
- IPC: H01L21/3065
Abstract:
The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.
Information query
IPC分类:
