公开(公告)号：US20150170886A1

公开(公告)日：2015-06-18

申请号：US14447712

申请日：2014-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Michikazu MORIMOTO ,  Naoki YASUI ,  Shunsuke KANAZAWA ,  Yasuo OHGOSHI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32192 ,  H01L21/32137

Abstract: In a plasma processing apparatus having a plasma processing chamber for applying plasma processing to a sample, a first radio frequency power supply for supplying first radio frequency power for generation of a plasma, a sample stage for mounting the sample thereon, a second radio frequency power supply for supplying second radio frequency power to the sample stage, and a pulse-generating unit for sending to the first radio frequency power supply a first pulse for time modulation of the first radio frequency power and for sending to the second radio frequency power supply a second pulse for time modulation of the second radio frequency power, the pulse-generating unit includes a phase control waveform generation unit for generating a phase modulation-use waveform for modulating the phase of ON period of the second pulse and modulates by the phase modulation-use waveform the phase of ON period of the second pulse.

Abstract translation: 在具有用于向样品施加等离子体处理的等离子体处理室的等离子体处理装置中，提供用于产生等离子体的第一射频功率的第一射频电源，用于安装样品的样品台，第二射频功率 用于向样本台提供第二射频功率的电源;以及脉冲发生单元，用于向第一射频电源发送用于第一射频功率的时间调制的第一脉冲，以及用于向第二射频电源发送 第二脉冲用于第二射频功率的时间调制，脉冲发生单元包括相位控制波形生成单元，用于产生用于调制第二脉冲的导通周期的相位的相位调制用波形， 使用波形第二脉冲的ON周期的相位。

公开(公告)号：US20160233057A1

公开(公告)日：2016-08-11

申请号：US15132701

申请日：2016-04-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Michikazu MORIMOTO ,  Naoki YASUI ,  Yasuo OHGOSHI

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32192 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on state of the time-modulated second radio-frequency power until an and of the on-state and maintains a matching state attained during the sampling effective period from after the end of the so-state until a next sampling effective period.

Abstract translation: 在包括在真空室中提供用于产生等离子体的第一高频电力的第一高频电源的等离子体处理装置中，将第二高频电源供给到样品的样品台上的第二高频电源 以及用于第二射频电源的匹配盒，匹配箱在从采样有效期间起执行匹配的信息进行采样，该采样有效期是从经过开始状态之后的规定时间起的时间点 时间调制的第二射频功率直到导通状态，并且在从状态结束之后到下一个采样有效期间的采样有效期间保持匹配状态。

公开(公告)号：US20140302682A1

公开(公告)日：2014-10-09

申请号：US13960831

申请日：2013-08-07

Applicant: Hitachi High-Technologies Corporation

Inventor： Satoru MUTO ,  Tetsuo ONO ,  Yasuo OHGOSHI ,  Hirofumi EITOKU

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32137 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32532 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L29/66795

Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.

Abstract translation: 本发明提供一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括等离子体处理室，其中等离子体处理样品，提供用于产生等离子体的第一射频电力的第一射频电源和第二无线电 其中所述等离子体处理方法包括以下步骤：通过第一脉冲对所述第一射频功率进行调制;其中，所述等离子体处理方法包括以下步骤： 并且通过逐渐控制作为等离子体处理时间的第一脉冲的占空比来控制血浆解离状态以产生期望的解离状态。

公开(公告)号：US20180337022A1

公开(公告)日：2018-11-22

申请号：US16050089

申请日：2018-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Michikazu MORIMOTO ,  Naoki YASUI ,  Yasuo OHGOSHI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32082 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32192 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

公开(公告)号：US20150170880A1

公开(公告)日：2015-06-18

申请号：US14603187

申请日：2015-01-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Satoru MUTO ,  Tetsuo ONO ,  Yasuo OHGOSHI ,  Hirofumi EITOKU

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32137 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32532 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L29/66795

Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.

Abstract translation: 本发明提供一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括等离子体处理室，其中等离子体处理样品，提供用于产生等离子体的第一射频电力的第一射频电源和第二无线电 其中所述等离子体处理方法包括以下步骤：通过第一脉冲对所述第一射频功率进行调制;其中，所述等离子体处理方法包括以下步骤： 并且通过逐渐控制作为等离子体处理时间的第一脉冲的占空比来控制血浆解离状态以产生期望的解离状态。

公开(公告)号：US20140057445A1

公开(公告)日：2014-02-27

申请号：US13743367

申请日：2013-01-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michikazu MORIMOTO ,  Yasuo OHGOSHI ,  Yuuzou OOHIRABARU ,  Tetsuo ONO

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32706 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.

Abstract translation: 本发明提供了一种等离子体处理装置，其具有提供可以高精度地广泛控制的调频射频功率的射频电源和使用等离子体处理装置的等离子体处理方法。 等离子体处理装置包括：真空室; 用于在真空室中产生等离子体的第一射频电源; 设置在真空室中的样品保持器，其上放置样品; 以及第二射频电源，向所述检体保持器供给射频电力，其中，所述第一射频电源和所述第二射频电源中的至少一个提供时间调制的射频电力， 调制具有两个或多个不同的控制范围，并且控制范围之一是用于高精度控制的控制范围。

公开(公告)号：US20140020831A1

公开(公告)日：2014-01-23

申请号：US13742409

申请日：2013-01-16

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasuo OHGOSHI ,  Michikazu MORIMOTO ,  Yuuzou OOHIRABARU ,  Tetsuo ONO

IPC: H01L21/67

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32192 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.

Abstract translation: 等离子体处理装置包括用于处理等离子体的样品的处理室，用于在处理室内产生等离子体的RF电源，用于向安装有样品的样品台提供RF偏置功率的RF偏置电源， 脉冲产生单元，用于产生用于调制来自RF电源的用于产生等离子体的输出的第一脉冲和用于调制来自RF偏置电源的输出的第二脉冲，以及用于提供样品对样品的处理的控制的控制器 。 脉冲发生单元产生基于从控制器发送的脉冲延迟时间同步的第一脉冲和第二脉冲。 建立脉冲延迟时间以相对于第一脉冲延迟第二脉冲。