公开(公告)号：US20160211153A1

公开(公告)日：2016-07-21

申请号：US14995637

申请日：2016-01-14

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiromitsu TERAUCHI ,  Tsutomu IIDA ,  Yuuzou OOHIRABARU

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32715

Abstract: A plasma processing method including disposing a wafer to be processed on a sample stage disposed in a processing chamber within a vacuum vessel, supplying an electric field using first high frequency power for plasma forming into the processing chamber and forming plasma, and supplying second high frequency power for bias potential forming to electrodes disposed within the sample stage and processing a film on a top surface of the wafer. At least the first or second high frequency power repeats a change of becoming a plurality of predetermined amplitudes for predetermined periods with a predetermined repetition period. In the processing of the film, supply of the high frequency power is changed by finally increasing a predetermined magnitude of amplitude among the repetition period, ratio of the period, and amplitude of the at least the first or second high frequency power, or first decreasing a predetermined magnitude of the amplitude.

Abstract translation: 一种等离子体处理方法，包括在设置在真空容器内的处理室中的样品台上设置待处理的晶片，使用用于等离子体成形的第一高频功率将电场提供到处理室中并形成等离子体，并且提供第二高频 形成用于设置在样品台内的电极的偏置电位的功率，并且在晶片的顶表面上处理薄膜。 至少第一或第二高频功率以预定的重复周期重复变成预定时间段的多个预定幅度。 在电影的处理中，通过最终在重复周期，周期的比例和至少第一或第二高频功率的振幅之间增加预定幅度的幅度来改变高频功率的供给，或者首先减小 幅度的预定幅度。

公开(公告)号：US20140057445A1

公开(公告)日：2014-02-27

申请号：US13743367

申请日：2013-01-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michikazu MORIMOTO ,  Yasuo OHGOSHI ,  Yuuzou OOHIRABARU ,  Tetsuo ONO

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32706 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.

Abstract translation: 本发明提供了一种等离子体处理装置，其具有提供可以高精度地广泛控制的调频射频功率的射频电源和使用等离子体处理装置的等离子体处理方法。 等离子体处理装置包括：真空室; 用于在真空室中产生等离子体的第一射频电源; 设置在真空室中的样品保持器，其上放置样品; 以及第二射频电源，向所述检体保持器供给射频电力，其中，所述第一射频电源和所述第二射频电源中的至少一个提供时间调制的射频电力， 调制具有两个或多个不同的控制范围，并且控制范围之一是用于高精度控制的控制范围。

公开(公告)号：US20140020831A1

公开(公告)日：2014-01-23

申请号：US13742409

申请日：2013-01-16

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasuo OHGOSHI ,  Michikazu MORIMOTO ,  Yuuzou OOHIRABARU ,  Tetsuo ONO

IPC: H01L21/67

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32192 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.

Abstract translation: 等离子体处理装置包括用于处理等离子体的样品的处理室，用于在处理室内产生等离子体的RF电源，用于向安装有样品的样品台提供RF偏置功率的RF偏置电源， 脉冲产生单元，用于产生用于调制来自RF电源的用于产生等离子体的输出的第一脉冲和用于调制来自RF偏置电源的输出的第二脉冲，以及用于提供样品对样品的处理的控制的控制器 。 脉冲发生单元产生基于从控制器发送的脉冲延迟时间同步的第一脉冲和第二脉冲。 建立脉冲延迟时间以相对于第一脉冲延迟第二脉冲。