发明申请
- 专利标题： METHODS OF FORMING SECURED METAL GATE ANTIFUSE STRUCTURES
- 专利标题（中）： 形成安全金属门防结构的方法
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申请号： US14134097申请日： 2013-12-19
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公开(公告)号： US20140103448A1公开(公告)日： 2014-04-17
- 发明人: Xianghong Tong , Zhanping Chen , Walid M. Hafez , Zhiyong Ma , Sarvesh H. Kulkarni , Kevin X. Zhang , Matthew B. Pedersen , Kevin D. Johnson
- 申请人： Xianghong Tong , Zhanping Chen , Walid M. Hafez , Zhiyong Ma , Sarvesh H. Kulkarni , Kevin X. Zhang , Matthew B. Pedersen , Kevin D. Johnson
- 主分类号： H01L23/525
- IPC分类号： H01L23/525 ; H01L21/44
摘要：
Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.
公开/授权文献
- US09123724B2 Methods of forming secured metal gate antifuse structures 公开/授权日：2015-09-01
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