公开(公告)号：US20120248546A1

公开(公告)日：2012-10-04

申请号：US13077681

申请日：2011-03-31

申请人： Xianghong Tong ,  Zhanping Chen ,  Walid M. Hafez ,  Zhiyong Ma ,  Sarvesh H. Kulkarni ,  Kevin X. Zhang ,  Matthew B. Pedersen ,  Kevin D. Johnson

发明人： Xianghong Tong ,  Zhanping Chen ,  Walid M. Hafez ,  Zhiyong Ma ,  Sarvesh H. Kulkarni ,  Kevin X. Zhang ,  Matthew B. Pedersen ,  Kevin D. Johnson

IPC分类号： H01L23/525 ,  H01L21/44

CPC分类号： H01L23/5252 ,  H01L21/44 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/11206 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

摘要翻译： 描述了形成和使用微电子结构的方法。 实施例包括在金属熔丝栅极和PMOS器件之间形成二极管，其中二极管设置在金属熔丝栅极的触点和PMOS器件的触点之间，并且其中二极管将金属熔丝栅极的触点耦合到 PMOS器件的接触。

公开(公告)号：US20240219460A1

公开(公告)日：2024-07-04

申请号：US18090415

申请日：2022-12-28

申请人： Xianghong TONG ,  Jennifer HUENING ,  Joshua KEVEK ,  Kimberlee CELIO ,  Tristan DEBORDE ,  Prasoon JOSHI ,  May Ling OH ,  Hyuk Ju RYU ,  Mitchell SENGER ,  Martin VON HAARTMAN ,  Yunfei WANG ,  Shuai ZHAO

发明人： Xianghong TONG ,  Jennifer HUENING ,  Joshua KEVEK ,  Kimberlee CELIO ,  Tristan DEBORDE ,  Prasoon JOSHI ,  May Ling OH ,  Hyuk Ju RYU ,  Mitchell SENGER ,  Martin VON HAARTMAN ,  Yunfei WANG ,  Shuai ZHAO

IPC分类号： G01R31/307 ,  G01R31/311

CPC分类号： G01R31/307 ,  G01R31/311

摘要： This disclosure describes systems, methods, and devices related to electron beam and nanoprobing techniques with probe tips for fault isolation in integrated circuits. A method may include generating a signal at a circuit device under test while a probe tip electrically interacts with a transistor of the circuit device under test; detecting, based on the signal and the laser at the transistor, an electrical output of the circuit device under test; and identifying, based on the electrical output, a location of a fault at the circuit device under test.

公开(公告)号：US08618613B2

公开(公告)日：2013-12-31

申请号：US13077681

申请日：2011-03-31

申请人： Xianghong Tong ,  Zhanping Chen ,  Walid M. Hafez ,  Zhiyong Ma ,  Sarvesh H. Kulkarni ,  Kevin X. Zhang ,  Matthew B. Pedersen ,  Kevin D. Johnson

发明人： Xianghong Tong ,  Zhanping Chen ,  Walid M. Hafez ,  Zhiyong Ma ,  Sarvesh H. Kulkarni ,  Kevin X. Zhang ,  Matthew B. Pedersen ,  Kevin D. Johnson

IPC分类号： H01L27/11 ,  H01L21/02 ,  H01L23/52

CPC分类号： H01L23/5252 ,  H01L21/44 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/11206 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

公开(公告)号：US20140103448A1

公开(公告)日：2014-04-17

申请号：US14134097

申请日：2013-12-19

申请人： Xianghong Tong ,  Zhanping Chen ,  Walid M. Hafez ,  Zhiyong Ma ,  Sarvesh H. Kulkarni ,  Kevin X. Zhang ,  Matthew B. Pedersen ,  Kevin D. Johnson

发明人： Xianghong Tong ,  Zhanping Chen ,  Walid M. Hafez ,  Zhiyong Ma ,  Sarvesh H. Kulkarni ,  Kevin X. Zhang ,  Matthew B. Pedersen ,  Kevin D. Johnson

IPC分类号： H01L23/525 ,  H01L21/44

CPC分类号： H01L23/5252 ,  H01L21/44 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/11206 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

摘要翻译： 描述了形成和使用微电子结构的方法。 实施例包括在金属熔丝栅极和PMOS器件之间形成二极管，其中二极管设置在金属熔丝栅极的触点和PMOS器件的触点之间，并且其中二极管将金属熔丝栅极的触点耦合到 PMOS器件的接触。

公开(公告)号：US08242831B2

公开(公告)日：2012-08-14

申请号：US12651341

申请日：2009-12-31

申请人： Xianghong Tong ,  Zhanping Chen ,  Kevin X. Zhang ,  Zhiyong Ma ,  Kevin D. Johnson ,  Jun He

发明人： Xianghong Tong ,  Zhanping Chen ,  Kevin X. Zhang ,  Zhiyong Ma ,  Kevin D. Johnson ,  Jun He

IPC分类号： H01H85/02

CPC分类号： H01L23/5256 ,  G11C8/20 ,  G11C17/16 ,  H01L23/576 ,  H01L2924/0002 ,  H01L2924/00

摘要： A tamper resistant fuse design is generally presented. In this regard, an apparatus is introduced comprising a plurality of fuses in an integrated circuit device to store values and a plurality of resistors in parallel to the fuses, wherein each fuse includes a parallel resistor to provide a potential dissipation path around the fuse. Other embodiments are also described and claimed.

摘要翻译： 通常提供防篡改保险丝设计。 在这方面，引入一种在集成电路装置中包括多个熔丝的装置，用于存储与熔丝并联的值和多个电阻，其中每个熔丝包括并联电阻器，以提供围绕熔丝的潜在耗散路径。 还描述和要求保护其他实施例。

公开(公告)号：US20110156801A1

公开(公告)日：2011-06-30

申请号：US12651341

申请日：2009-12-31

申请人： Xianghong Tong ,  Zhanping Chen ,  Kevin X. Zhang ,  Zhiyong Ma ,  Kevin D. Johnson ,  Jun He

发明人： Xianghong Tong ,  Zhanping Chen ,  Kevin X. Zhang ,  Zhiyong Ma ,  Kevin D. Johnson ,  Jun He

IPC分类号： H01H85/00

CPC分类号： H01L23/5256 ,  G11C8/20 ,  G11C17/16 ,  H01L23/576 ,  H01L2924/0002 ,  H01L2924/00

摘要： A tamper resistant fuse design is generally presented. In this regard, an apparatus is introduced comprising a plurality of fuses in an integrated circuit device to store values and a plurality of resistors in parallel to the fuses, wherein each fuse includes a parallel resistor to provide a potential dissipation path around the fuse. Other embodiments are also described and claimed.

摘要翻译： 通常提供防篡改保险丝设计。 在这方面，引入一种在集成电路装置中包括多个熔丝的装置，用于存储与熔丝并联的值和多个电阻，其中每个熔丝包括并联电阻器，以提供围绕熔丝的潜在耗散路径。 还描述和要求保护其他实施例。