Invention Application
- Patent Title: THROUGH SILICON VIAS
- Patent Title (中): 通过硅胶
-
Application No.: US13831898Application Date: 2013-03-15
-
Publication No.: US20140264911A1Publication Date: 2014-09-18
- Inventor: Benfu LIN , Hong Yu , Lup San , Alex See , Wei Lu
- Applicant: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Applicant Address: SG Singapore
- Assignee: Globalfoundries Singapore Pte. Ltd.
- Current Assignee: Globalfoundries Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768

Abstract:
A device and methods for forming a device are disclosed. A substrate is provided and a TSV is formed in the substrate through a top surface of the substrate. The TSV and top surface of the substrate is lined with an insulation stack having a first insulation layer, a polish stop layer and a second insulation layer. A conductive layer is formed on the substrate. The TSV is filled with conductive material of the conductive layer. The substrate is planarized to remove excess conductive material of the conductive layer. The planarizing stops on the polish stop layer to form a planar top surface.
Public/Granted literature
- US09287197B2 Through silicon vias Public/Granted day:2016-03-15
Information query
IPC分类: