Invention Application
- Patent Title: THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME
- Patent Title (中): 薄膜晶体管和使用其的显示器件
-
Application No.: US14245102Application Date: 2014-04-04
-
Publication No.: US20140307194A1Publication Date: 2014-10-16
- Inventor: Isao SUZUMURA , Norihiro UEMURA , Takeshi NODA , Hidekazu MIYAKE , Yohei YAMAGUCHI
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Priority: JP2013-083282 20130411
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12
Abstract:
In a bottom gate thin film transistor using a first oxide semiconductor layer as a channel layer, the first oxide semiconductor layer and second semiconductor layers include In and O. An (O/In) ratio of the second oxide semiconductor layers is equal to or larger than that of the first oxide semiconductor layer, and a film thickness thereof is thicker than that of the first oxide semiconductor layer.
Public/Granted literature
- US09391213B2 Thin film transistor and display device using the same Public/Granted day:2016-07-12
Information query
IPC分类:
