Invention Application
- Patent Title: STORAGE ELEMENT AND MEMORY
- Patent Title (中): 存储元素和存储器
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Application No.: US14359488Application Date: 2012-11-19
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Publication No.: US20140328119A1Publication Date: 2014-11-06
- Inventor: Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
- Applicant: Sony Corporation
- Priority: JP2011-2618523 20111130
- International Application: PCT/JP2012/007416 WO 20121119
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/02
Abstract:
A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer.
Public/Granted literature
- US09437267B2 Storage element and memory Public/Granted day:2016-09-06
Information query
