发明申请
- 专利标题: RADIATION HARDENED CIRCUIT
- 专利标题(中): 辐射硬化电路
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申请号: US14276567申请日: 2014-05-13
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公开(公告)号: US20140340133A1公开(公告)日: 2014-11-20
- 发明人: Gilles Gasiot , Sylvain Clerc , Junaid Yousuf , Maximilien Glorieux
- 申请人: STMicroelectronics (Crolles 2) SAS , STMicroelectronics Pvt. Ltd.
- 申请人地址: FR Crolles IN Greater Noida
- 专利权人: STMicroelectronics (Crolles 2) SAS,STMicroelectronics Pvt. Ltd.
- 当前专利权人: STMicroelectronics (Crolles 2) SAS,STMicroelectronics Pvt. Ltd.
- 当前专利权人地址: FR Crolles IN Greater Noida
- 优先权: EP13305644 20130517
- 主分类号: H03K19/003
- IPC分类号: H03K19/003 ; H03L7/08
摘要:
A circuit including a data storage element; first and second input circuitry coupled respectively to first and second inputs of the data storage element and each including a plurality of components adapted to generate, as a function of an initial signal, first and second input signals respectively provided to the first and second inputs; wherein the data storage element includes a first storage node and is configured such that a voltage state stored at the first storage node is protected from a change in only one of the first and second input signals by being determined by the conduction state of a first transistor coupled to the first storage node and controlled based on the first input signal and by the conduction state of a second transistor coupled to the first storage node and controlled based on the second input signal.
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