Invention Application
- Patent Title: TESTING THROUGH-SILICON-VIAS
- Patent Title (中): 通过硅玻璃测试
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Application No.: US14241407Application Date: 2012-08-31
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Publication No.: US20140376324A1Publication Date: 2014-12-25
- Inventor: Thomas Vogelsang , William N. Ng , Frederick A. Ware
- Applicant: RAMBUS INC.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- International Application: PCT/US12/53516 WO 20120831
- Main IPC: G11C29/04
- IPC: G11C29/04 ; G11C8/10 ; G01R31/28

Abstract:
Embodiments generally relate to integrated circuit devices having through silicon vias (TSVs). In one embodiment, an integrated circuit (IC) device includes a field of TSVs and an address decoder that selectably couples at least one of the TSVs to at least one of a test input and a test evaluation circuit. In another embodiment, a method includes selecting one or more TSVs from a field of TSVs in at least one IC device, and coupling each selected TS V to at least one of a test input and a test evaluation circuit.
Public/Granted literature
- US09570196B2 Testing through-silicon-vias Public/Granted day:2017-02-14
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