发明申请
US20150091110A1 Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers
审中-公开
具有耦合自由磁性层的垂直自旋转移转矩存储器（STTM）装置
- 专利标题： Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers
- 专利标题（中）： 具有耦合自由磁性层的垂直自旋转移转矩存储器（STTM）装置
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申请号： US14039668申请日： 2013-09-27
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公开(公告)号： US20150091110A1公开(公告)日： 2015-04-02
- 发明人: Charles C. Kuo , Kaan Oguz , Mark L. Doczy , Brian S. Doyle , Satyarth Suri , Robert S. Chau , David L. Kencke , Roksana Golizadeh Mojarad , Anurag Chaudhry
- 申请人： Charles C. Kuo , Kaan Oguz , Mark L. Doczy , Brian S. Doyle , Satyarth Suri , Robert S. Chau , David L. Kencke , Roksana Golizadeh Mojarad , Anurag Chaudhry
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L43/12
摘要：
Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and damping are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A first free magnetic layer is disposed above the dielectric layer. A second free magnetic layer is magnetically coupled with the first free magnetic layer.