发明申请
US20150104932A1 COMPOSITIONS FOR ETCHING AND METHODS OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME
审中-公开
用于蚀刻的组合物和使用其形成半导体器件的方法
- 专利标题： COMPOSITIONS FOR ETCHING AND METHODS OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME
- 专利标题（中）： 用于蚀刻的组合物和使用其形成半导体器件的方法
-
申请号： US14573845申请日： 2014-12-17
-
公开(公告)号： US20150104932A1公开(公告)日： 2015-04-16
- 发明人: Young Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
- 申请人： Samsung Electronics Co., Ltd. , Soulbrain Co., Ltd.
- 优先权： KR10-2011-0106461 20111018
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L27/115 ; C09K13/06
摘要：
Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
公开/授权文献
信息查询
IPC分类:
