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1.发明申请COMPOSITIONS FOR ETCHING AND METHODS OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME 审中-公开用于蚀刻的组合物和使用其形成半导体器件的方法公开(公告)号：US20150104932A1
公开(公告)日：2015-04-16
申请号：US14573845
申请日：2014-12-17
发明人： Young Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
IPC分类号： H01L21/02 , H01L27/115 , C09K13/06
CPC分类号： H01L21/02658 , C09K13/04 , C09K13/06 , C23F1/16 , H01L21/31111 , H01L27/11556 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889 , H01L29/7926
摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
摘要翻译： 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物。 硅化合物包括硅原子，具有与硅原子结合的氨基的原子团以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。
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公开(公告)号：US20150348799A1
公开(公告)日：2015-12-03
申请号：US14824786
申请日：2015-08-12
发明人： Young Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
IPC分类号： H01L21/311 , H01L27/115 , H01L29/66 , C09K13/06
CPC分类号： H01L29/7926 , C09K13/04 , C09K13/06 , C23F1/16 , H01L21/31111 , H01L27/11556 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889
摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
摘要翻译： 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物材料。 硅化合物材料包括硅原子，选自氮原子，磷原子和与硅原子结合的硫原子中的至少一种，以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。
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公开(公告)号：US09136120B2
公开(公告)日：2015-09-15
申请号：US14573845
申请日：2014-12-17
发明人： Young Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
IPC分类号： H01L21/302 , H01L21/02 , C09K13/04 , C23F1/16 , C09K13/06 , H01L21/311 , H01L29/66 , H01L29/788 , H01L29/792 , H01L27/115
CPC分类号： H01L21/02658 , C09K13/04 , C09K13/06 , C23F1/16 , H01L21/31111 , H01L27/11556 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889 , H01L29/7926
摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
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公开(公告)号：US09368647B2
公开(公告)日：2016-06-14
申请号：US14824786
申请日：2015-08-12
发明人： Young-Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
IPC分类号： C09K13/04 , H01L29/792 , C09K13/06 , C23F1/16 , H01L21/311 , H01L29/66 , H01L29/788 , H01L27/115
CPC分类号： H01L29/7926 , C09K13/04 , C09K13/06 , C23F1/16 , H01L21/31111 , H01L27/11556 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889
摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
摘要翻译： 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物材料。 硅化合物材料包括硅原子，选自氮原子，磷原子和与硅原子结合的硫原子中的至少一种，以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。
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公开(公告)号：US09972638B2
公开(公告)日：2018-05-15
申请号：US14621568
申请日：2015-02-13
发明人： Sunghae Lee , Daehong Eom , JinGyun Kim , Daehyun Jang , Kihyun Hwang , Seongsoo Lee , Kyunghyun Kim , Chadong Yeo , Jun-Youl Yang , Se-Ho Cha
IPC分类号： H01L21/8238 , H01L27/11582 , H01L29/78 , H01L21/283 , H01L21/311 , H01L27/11556 , H01L29/66
CPC分类号： H01L27/11582 , H01L21/283 , H01L21/311 , H01L27/11556 , H01L29/6653 , H01L29/66553 , H01L29/7827
摘要： Three dimensional semiconductor memory devices and methods of fabricating the same are provided. According to the method, sacrificial layers and insulating layers are alternately and repeatedly stacked on a substrate, and a cutting region penetrating an uppermost sacrificial layer of the sacrificial layers is formed. The cutting region is filled with a non sacrificial layer. The insulating layers and the sacrificial layers are patterned to form a mold pattern. The mold pattern includes insulating patterns, sacrificial patterns, and the non sacrificial layer in the cutting region. The sacrificial patterns may be replaced with electrodes. The related semiconductor memory device is also provided.
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