公开(公告)号：US09136120B2

公开(公告)日：2015-09-15

申请号：US14573845

申请日：2014-12-17

申请人： Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

发明人： Young Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC分类号： H01L21/302 ,  H01L21/02 ,  C09K13/04 ,  C23F1/16 ,  C09K13/06 ,  H01L21/311 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115

CPC分类号： H01L21/02658 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

公开(公告)号：US09368647B2

公开(公告)日：2016-06-14

申请号：US14824786

申请日：2015-08-12

申请人： Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

发明人： Young-Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC分类号： C09K13/04 ,  H01L29/792 ,  C09K13/06 ,  C23F1/16 ,  H01L21/311 ,  H01L29/66 ,  H01L29/788 ,  H01L27/115

CPC分类号： H01L29/7926 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889

摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

摘要翻译： 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物材料。 硅化合物材料包括硅原子，选自氮原子，磷原子和与硅原子结合的硫原子中的至少一种，以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。

公开(公告)号：US20150348799A1

公开(公告)日：2015-12-03

申请号：US14824786

申请日：2015-08-12

申请人： Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

发明人： Young Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC分类号： H01L21/311 ,  H01L27/115 ,  H01L29/66 ,  C09K13/06

CPC分类号： H01L29/7926 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889

摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

摘要翻译： 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物材料。 硅化合物材料包括硅原子，选自氮原子，磷原子和与硅原子结合的硫原子中的至少一种，以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。

公开(公告)号：US20150104932A1

公开(公告)日：2015-04-16

申请号：US14573845

申请日：2014-12-17

申请人： Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

发明人： Young Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC分类号： H01L21/02 ,  H01L27/115 ,  C09K13/06

CPC分类号： H01L21/02658 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

摘要翻译： 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物。 硅化合物包括硅原子，具有与硅原子结合的氨基的原子团以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。

公开(公告)号：US10361100B2

公开(公告)日：2019-07-23

申请号：US15368988

申请日：2016-12-05

申请人： Samsung Electronics Co., Ltd.

发明人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

IPC分类号： H01L21/67 ,  H01L21/02 ,  F26B5/04

摘要： A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

公开(公告)号：US10128120B2

公开(公告)日：2018-11-13

申请号：US15242190

申请日：2016-08-19

申请人： Samsung Electronics Co., Ltd.

发明人： Kwangsu Kim ,  Byoung Jae Park ,  Yongsun Ko ,  Kyunghyun Kim ,  ChangSup Mun ,  Kijong Park

IPC分类号： H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

摘要： The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.

公开(公告)号：US10580617B2

公开(公告)日：2020-03-03

申请号：US15841230

申请日：2017-12-13

申请人： Samsung Electronics Co., Ltd.

发明人： Kijong Park ,  Jun-Youl Yang ,  Yongsun Ko ,  Kyunghyun Kim ,  Taeheon Kim ,  Jae Jin Shin

IPC分类号： H01J37/32

摘要： A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.

公开(公告)号：US09934959B2

公开(公告)日：2018-04-03

申请号：US14537318

申请日：2014-11-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yong-Jhin Cho ,  Jung-Min Oh ,  Yongmyung Jun ,  Yongsun Ko ,  Kuntack Lee ,  Hyosan Lee

IPC分类号： H01L21/02

CPC分类号： H01L21/02101 ,  H01L21/02057

摘要： A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a second cleaning agent at or below a first temperature and distilling the etching agent and the first cleaning agent and removing the second cleaning agent. The method includes condensing or compressing the etching agent and the first cleaning agent forming a second mixed solution including the etching agent and the first cleaning agent. The method includes heating the second mixed solution at a temperature lower than a second temperature, redistilling the etching agent and extracting the first cleaning agent. The second temperature is lower than the first temperature.

公开(公告)号：US09859432B2

公开(公告)日：2018-01-02

申请号：US15245549

申请日：2016-08-24

申请人： Samsung Electronics Co., Ltd.

发明人： Yongsun Ko ,  Sangjine Park ,  Hagju Cho ,  Byungjae Park ,  Jeongnam Han

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/423

CPC分类号： H01L29/785 ,  H01L21/823821 ,  H01L29/0649 ,  H01L29/42372 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848

摘要： A semiconductor device may include a pair of active patterns spaced apart from each other in a first direction, a pair of gate electrodes intersecting the pair of the active patterns in a second direction crossing the first direction, gate spacers on sidewalls of the pair of the active patterns, source/drain regions on the pair active patterns between the pair of the gate electrodes, and a spacer protection pattern between the pair of the gate electrodes and between the pair of the active patterns. The spacer protection pattern may be commonly connected to the gate spacers.

公开(公告)号：US20170084469A1

公开(公告)日：2017-03-23

申请号：US15368988

申请日：2016-12-05

申请人： Samsung Electronics Co., Ltd.

发明人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67034 ,  F26B5/04 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/6715

摘要： A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.