Invention Application
- Patent Title: PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION
- Patent Title (中): 等离子体激活一体化电介质膜沉积
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Application No.: US14607997Application Date: 2015-01-28
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Publication No.: US20150206719A1Publication Date: 2015-07-23
- Inventor: Shankar Swaminathan , Jon Henri , Dennis Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi Kattige , Bart van Schravendijk , Andrew J. McKerrow
- Applicant: Novellus Systems, Inc.
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/455 ; C23C16/44 ; C23C16/52
Abstract:
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
Public/Granted literature
- US09570274B2 Plasma activated conformal dielectric film deposition Public/Granted day:2017-02-14
Information query
