公开(公告)号：US10043655B2

公开(公告)日：2018-08-07

申请号：US15426889

申请日：2017-02-07

Applicant: Novellus Systems, Inc.

Inventor： Shankar Swaminathan ,  Jon Henri ,  Dennis Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi Kattige ,  Bart van Schravendijk ,  Andrew J. McKerrow

IPC: H01L21/469 ,  H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/768

CPC classification number: H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

公开(公告)号：US10741458B2

公开(公告)日：2020-08-11

申请号：US15965628

申请日：2018-04-27

Applicant: Novellus Systems, Inc.

Inventor： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20180247875A1

公开(公告)日：2018-08-30

申请号：US15965628

申请日：2018-04-27

Applicant: Novellus Systems, Inc.

Inventor： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20170316988A1

公开(公告)日：2017-11-02

申请号：US15650662

申请日：2017-07-14

Applicant: Novellus Systems, Inc.

Inventor： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20170148628A1

公开(公告)日：2017-05-25

申请号：US15426889

申请日：2017-02-07

Applicant: Novellus Systems, Inc.

Inventor： Shankar Swaminathan ,  Jon Henri ,  Dennis Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi Kattige ,  Bart van Schravendijk ,  Andrew J. McKerrow

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40

CPC classification number: H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

公开(公告)号：US09390909B2

公开(公告)日：2016-07-12

申请号：US14194324

申请日：2014-02-28

Applicant: Novellus Systems, Inc.

Inventor： Frank L. Pasquale ,  Shankar Swaminathan ,  Adrien LaVoie ,  Nader Shamma ,  Girish Dixit

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/66 ,  H01L21/033

CPC classification number: H01L21/0337 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/20

Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

Abstract translation: 提供了在芯层上沉积纳米级保护层的方法，以使得能够在核心层上沉积高质量的保形膜以用于高级多重图案化方案。 在某些实施方案中，所述方法包括使用具有低高频射频（HFRF）等离子体功率的等离子体原子层沉积技术沉积薄氧化硅或氧化钛膜，然后沉积具有高的高分子量的共形氧化钛膜或间隔物 HFRF等离子体功率。

公开(公告)号：US20140216337A1

公开(公告)日：2014-08-07

申请号：US14133239

申请日：2013-12-18

Applicant: Novellus Systems, Inc.

Inventor： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart K. van Schravendijk ,  Andrew J. McKerrow

IPC: H01L21/67

CPC classification number: H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

公开(公告)号：US20140134827A1

公开(公告)日：2014-05-15

申请号：US14074596

申请日：2013-11-07

Applicant: Novellus Systems, Inc.

Inventor： Shankar Swaminathan ,  Bart van Schravendijk ,  Adrien Lavoie ,  Sesha Varadarajan ,  Jason Daejin Park ,  Michal Danek ,  Naohiro Shoda

IPC: H01L21/762 ,  H01L21/67

CPC classification number: H01L21/76224 ,  C23C16/045 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017

Abstract: A method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate is disclosed. A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited in the one or more gaps over the first dielectric oxide layer via CFD.

Abstract translation: 公开了一种用于在衬底中的高纵横比间隙中共形沉积介电氧化物的方法和装置。 衬底在反应室中具有一个或多个间隙，其中每个间隙具有大于约5:1的深宽比。 第一电介质氧化物层通过CFD沉积在一个或多个间隙中。 使用等离子体蚀刻蚀刻第一电介质氧化物层的一部分，其中蚀刻第一电介质氧化物层的部分以比在每个间隙的底表面附近的顶表面附近以更快的速率发生，使得第一电介质氧化物层具有 从每个间隙的顶表面到底表面的锥形轮廓。 第二电介质氧化物层通过CFD沉积在第一电介质氧化物层上的一个或多个间隙中。

公开(公告)号：US10192742B2

公开(公告)日：2019-01-29

申请号：US15874766

申请日：2018-01-18

Applicant: Novellus Systems, Inc.

Inventor： Frank L. Pasquale ,  Shankar Swaminathan ,  Adrien LaVoie ,  Nader Shamma ,  Girish A. Dixit

IPC: H01L21/31 ,  H01L21/033 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/66 ,  C23C16/505 ,  C23C16/56 ,  H01L21/027 ,  H01L21/311

Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

公开(公告)号：US09786570B2

公开(公告)日：2017-10-10

申请号：US15015952

申请日：2016-02-04

Applicant: Novellus Systems, Inc.

Inventor： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.