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    Methods of depositing smooth and conformal ashable hard mask films
    2.
    发明授权
    Methods of depositing smooth and conformal ashable hard mask films 有权
    沉积光滑和保形的可硬化硬掩模膜的方法

    公开(公告)号：US09240320B1

    公开(公告)日：2016-01-19

    申请号：US13856364

    申请日：2013-04-03

    Applicant: Novellus Systems, Inc.

    Inventor： Pramod Subramonium ,  Zhiyuan Fang ,  Shawn Hancock ,  Mike Pierce ,  Jon Henri

    IPC: H05H1/24 ,  H01L21/027

    CPC classification number: H01L21/0273 ,  C23C16/045 ,  C23C16/26 ,  C23C16/505 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337

    Abstract: Provided are plasma enhanced chemical vapor deposition methods of depositing smooth and conformal ashable hard mask films on substrates containing raised or recessed features. The methods involve using precursors having relatively high C:H ratios, such as acetylene (C:H ratio of 1), and plasmas having low ion energies and fluxes. According to various embodiments, the methods involve depositing smooth ashable hard mask films using high frequency radio frequency-generated plasmas with no low frequency component and/or relatively high pressures. Also provided are methods of depositing ashable hard mask films having good selectivity and improved side wall coverage and roughness. The methods involve depositing a first ashable hard mask film on a substrate having a feature using a process optimized for selectivity and/or optical properties and then depositing a smoothing layer on the first ashable hard mask film using an HF-only process.

    Abstract translation: 提供了等离子体增强化学气相沉积方法，其在含有凸起或凹陷特征的基底上沉积光滑和保形的可硬化硬掩模膜。 所述方法包括使用具有相对较高C:H比例的前体，例如乙炔（C：H比为1）和具有低离子能量和通量的等离子体。 根据各种实施方案，所述方法包括使用没有低频分量和/或相对高的压力的高频无线电频率产生的等离子体沉积光滑的可硬化硬掩模薄膜。 还提供了具有良好选择性和改进的侧壁覆盖度和粗糙度的可沉积硬掩模膜的方法。 所述方法包括使用针对选择性和/或光学性质优化的方法在具有特征的基底上沉积第一可硬化硬掩模膜，然后使用仅HF工艺在第一可吸收硬掩模膜上沉积平滑层。

    PLASMA CLEAN METHOD FOR DEPOSITION CHAMBER
    4.
    发明申请
    PLASMA CLEAN METHOD FOR DEPOSITION CHAMBER 审中-公开
    用于沉积室的等离子体清洁方法

    公开(公告)号：US20140053867A1

    公开(公告)日：2014-02-27

    申请号：US14067648

    申请日：2013-10-30

    Applicant: Novellus Systems, Inc.

    Inventor： Zhiyuan Fang ,  Pramod Subramonium ,  Jon Henri ,  Keith Fox

    IPC: B08B7/00 ,  B08B9/00

    CPC classification number: B08B7/0035 ,  B08B9/00 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

    Abstract: Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less).

    Abstract translation: 提供了用于从沉积反应器的内表面除去残留物的改进的方法和装置。 这些方法涉及通过在远程等离子体发生器中产生清洁试剂自由基，然后在将清洁试剂混合物引入沉积室的同时进一步输送原位等离子体能量来增加沉积室内清洗剂自由基的可用性。 某些实施方案涉及多级方法，其包括其中以高压（例如，约0.6托或更高）引入清洗剂混合物的阶段，以及在低压（例如约0.6）下引入清洗试剂混合物的阶段 乇以下）。

    METHODS AND APPARATUS FOR PLASMA-BASED DEPOSITION
    10.
    发明申请
    METHODS AND APPARATUS FOR PLASMA-BASED DEPOSITION 有权
    基于等离子体沉积的方法和装置

    公开(公告)号：US20140057454A1

    公开(公告)日：2014-02-27

    申请号：US13974808

    申请日：2013-08-23

    Applicant: Novellus Systems, Inc.

    Inventor： Pramod Subramonium ,  Aaron Bingham ,  Tim Thomas ,  Jon Henri ,  Greg Farhner

    IPC: H01L21/469

    CPC classification number: H01L21/469 ,  C23C16/26 ,  C23C16/509 ,  H01J37/32091 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/31144

    Abstract: High-deposition rate methods for forming transparent ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers are provided. The methods involve placing a wafer on a powered electrode such as a powered pedestal for plasma-enhanced deposition. According to various embodiments, the deposition is run at low hydrocarbon precursor partial pressures and/or low process temperatures. Also provided are ceramic wafer pedestals with multiple electrode planes embedded with the pedestal are provided. According to various embodiments, the pedestals have multiple RF mesh electrode planes that are connected together such that all the electrode planes are at the same potential.

    Abstract translation: 提供了用于形成对下层具有高等离子体蚀刻选择性的透明可吸入硬掩模（AHM）的高沉积速率方法。 该方法包括将晶片放置在诸如用于等离子体增强沉积的动力基座的动力电极上。 根据各种实施方案，沉积在低烃前体分压和/或低工艺温度下运行。 还提供了具有嵌入基座的多个电极平面的陶瓷晶片基座。 根据各种实施例，基座具有连接在一起的多个RF网状电极平面，使得所有电极平面处于相同的电位。

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