Invention Application
US20150221372A1 EMBEDDED NON-VOLATILE MEMORY WITH SINGLE POLYSILICON LAYER MEMORY CELLS PROGRAMMABLE THROUGH BAND-TO-BAND TUNNELING-INDUCED HOT ELECTRON AND ERASABLE THROUGH FOWLER-NORDHEIM TUNNELING
有权
嵌入式非易失性存储器，具有单个多晶硅层记忆细胞，可编程通过带对带隧道诱导的热电子和可通过粉末 - 诺德海姆隧道进行可擦除
- Patent Title: EMBEDDED NON-VOLATILE MEMORY WITH SINGLE POLYSILICON LAYER MEMORY CELLS PROGRAMMABLE THROUGH BAND-TO-BAND TUNNELING-INDUCED HOT ELECTRON AND ERASABLE THROUGH FOWLER-NORDHEIM TUNNELING
- Patent Title (中): 嵌入式非易失性存储器，具有单个多晶硅层记忆细胞，可编程通过带对带隧道诱导的热电子和可通过粉末 - 诺德海姆隧道进行可擦除
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Application No.: US14605350Application Date: 2015-01-26
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Publication No.: US20150221372A1Publication Date: 2015-08-06
- Inventor: Luca MILANI , Fabrizio TORRICELLI , Anna Richelli , Luigi Colalongo , Zsolt Miklos Kovàcs-Vajna
- Applicant: STMICROELECTRONICS S.r.l.
- Priority: ITMI2014A000155 20140204
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/26 ; H01L29/66 ; H01L21/28 ; H01L29/788 ; G11C16/10 ; H01L27/115
Abstract:
A non-volatile memory includes a plurality of memory cells arranged in a plurality of rows and columns. Each memory cell includes a read portion and a control portion. The read portion and the control portion share an electrically floating layer of conductive material defining a first capacitive coupling with the read portion and a second capacitive coupling with the control portion. The first capacitive coupling defines a first capacity greater than a second capacity defined by the second capacitive coupling. The control portion is configured so that an electric current injects or extracts charge carriers into or from the electrically floating layer to store of a first logic value or a second logic value, respectively, in the memory cell.
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