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    EMBEDDED NON-VOLATILE MEMORY WITH SINGLE POLYSILICON LAYER MEMORY CELLS ERASABLE THROUGH BAND TO BAND TUNNELING INDUCED HOT ELECTRON AND PROGRAMMABLE THROUGH FOWLER-NORDHEIM TUNNELING
    3.
    发明申请
    EMBEDDED NON-VOLATILE MEMORY WITH SINGLE POLYSILICON LAYER MEMORY CELLS ERASABLE THROUGH BAND TO BAND TUNNELING INDUCED HOT ELECTRON AND PROGRAMMABLE THROUGH FOWLER-NORDHEIM TUNNELING 审中-公开
    嵌入式非易失性存储器，具有单层多层记忆细胞，通过带状隧道诱导热电子可擦除，可编程通过FOWLER-NORDHEIM隧道

    公开(公告)号：US20150221661A1

    公开(公告)日：2015-08-06

    申请号：US14605303

    申请日：2015-01-26

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Luca MILANI ,  Fabrizio TORRICELLI ,  Anna Richelli ,  Luigi Colalongo ,  Zsolt Miklos Kovàcs-Vajna

    IPC: H01L27/115

    CPC classification number: H01L27/11521 ,  H01L27/11519 ,  H01L27/11558 ,  H01L27/1156 ,  H01L29/66825 ,  H01L29/7881

    Abstract: A non-volatile memory includes cells arranged in rows and columns. Each memory cell includes an access portion and a control portion. The access and control portions share an electrically floating layer of conductive material defining a first capacitive coupling with the access portion and a second capacitive coupling with the control portion. The first capacitive coupling defines a first capacity lower than a second capacity defined by the second capacitive coupling. The control portion is configured so that an electric current extracts charge carriers from the electrically floating layer through Fowler-Nordheim tunneling to store a first logic value in the memory cell. The access portion is configured so that an electric current injects charge carriers in the electrically floating layer by injection of band-to-band tunneling-induced hot electrons to store a second logic value, respectively, in the memory cell.

    Abstract translation: 非易失性存储器包括以行和列排列的单元。 每个存储单元包括访问部分和控制部分。 访问和控制部分共享导电材料的电浮置层，其限定了与访问部分的第一电容耦合和与控制部分的第二电容耦合。 第一电容耦合限定了低于由第二电容耦合限定的第二容量的第一容量。 控制部分被配置成使得电流通过Fowler-Nordheim隧道从电浮置层提取电荷载流子，以将第一逻辑值存储在存储器单元中。 访问部分被配置为使得电流通过注入频带隧穿感应的热电子而分别在存储单元中存储第二逻辑值来在电浮置层中注入电荷载流子。

    Embedded non-volatile memory with single polysilicon layer memory cells programmable through channel hot electrons and erasable through fowler-nordheim tunneling
    4.
    发明授权
    Embedded non-volatile memory with single polysilicon layer memory cells programmable through channel hot electrons and erasable through fowler-nordheim tunneling 有权
    嵌入式非易失性存储器，单个多晶硅层存储单元可通过通道热电子编程，并可通过fowler-nordheim隧道进行擦除

    公开(公告)号：US09368209B2

    公开(公告)日：2016-06-14

    申请号：US14605246

    申请日：2015-01-26

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Luca Milani ,  Fabrizio Torricelli ,  Anna Richelli ,  Luigi Colalongo ,  Zsolt Miklos Kovàcs-Vajna

    IPC: G11C16/10 ,  G11C16/04 ,  H01L27/115 ,  H01L21/28 ,  H01L29/66 ,  H01L29/788

    CPC classification number: G11C16/0408 ,  H01L21/28273 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11558 ,  H01L29/66825 ,  H01L29/7881

    Abstract: A non-volatile memory includes memory cells arranged in rows and columns. Each memory cell includes a program/read portion and an erase portion that share an electrically floating layer of conductive material defining a first capacitive coupling with the program/read portion and a second capacitive coupling with the erase portion. The first capacitive coupling defines a first capacitance greater than a second capacitance defined by the second capacitive coupling. The erase portion is configured so that an electric current extracts charge carriers from the electrically floating layer to store a first logic value in the memory cell. The program/read portion is further configured so that an electric current injects charge carriers in the electrically floating layer to store a second logic value in the memory cell.

    Abstract translation: 非易失性存储器包括以行和列排列的存储单元。 每个存储器单元包括程序/读取部分和擦除部分，其共享限定与程序/读取部分的第一电容耦合的导电材料的电浮置层和与擦除部分的第二电容耦合。 第一电容耦合限定大于由第二电容耦合限定的第二电容的第一电容。 擦除部分被配置为使得电流从电浮动层提取电荷载流子以将第一逻辑值存储在存储器单元中。 程序/读取部分被进一步配置成使得电流注入电浮置层中的电荷载流子以将第二逻辑值存储在存储单元中。

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