公开(公告)号：US20150221372A1

公开(公告)日：2015-08-06

申请号：US14605350

申请日：2015-01-26

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Luca MILANI ,  Fabrizio TORRICELLI ,  Anna Richelli ,  Luigi Colalongo ,  Zsolt Miklos Kovàcs-Vajna

IPC: G11C16/04 ,  G11C16/26 ,  H01L29/66 ,  H01L21/28 ,  H01L29/788 ,  G11C16/10 ,  H01L27/115

CPC classification number: G11C16/0408 ,  G11C16/10 ,  G11C16/26 ,  H01L21/28273 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11558 ,  H01L29/66825 ,  H01L29/7881 ,  H01L29/7883

Abstract: A non-volatile memory includes a plurality of memory cells arranged in a plurality of rows and columns. Each memory cell includes a read portion and a control portion. The read portion and the control portion share an electrically floating layer of conductive material defining a first capacitive coupling with the read portion and a second capacitive coupling with the control portion. The first capacitive coupling defines a first capacity greater than a second capacity defined by the second capacitive coupling. The control portion is configured so that an electric current injects or extracts charge carriers into or from the electrically floating layer to store of a first logic value or a second logic value, respectively, in the memory cell.

Abstract translation: 非易失性存储器包括以多行和列排列的多个存储单元。 每个存储单元包括读取部分和控制部分。 读取部分和控制部分共享导电材料的电浮置层，其限定与读取部分的第一电容耦合和与控制部分的第二电容耦合。 第一电容耦合限定大于由第二电容耦合限定的第二容量的第一容量。 控制部分被配置为使得电流将电荷载流子注入或从电浮置层中提取，或者从电浮置层中提取电荷载体，以将第一逻辑值或第二逻辑值分别存储在存储单元中。

公开(公告)号：US20150221661A1

公开(公告)日：2015-08-06

申请号：US14605303

申请日：2015-01-26

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Luca MILANI ,  Fabrizio TORRICELLI ,  Anna Richelli ,  Luigi Colalongo ,  Zsolt Miklos Kovàcs-Vajna

IPC: H01L27/115

CPC classification number: H01L27/11521 ,  H01L27/11519 ,  H01L27/11558 ,  H01L27/1156 ,  H01L29/66825 ,  H01L29/7881

Abstract: A non-volatile memory includes cells arranged in rows and columns. Each memory cell includes an access portion and a control portion. The access and control portions share an electrically floating layer of conductive material defining a first capacitive coupling with the access portion and a second capacitive coupling with the control portion. The first capacitive coupling defines a first capacity lower than a second capacity defined by the second capacitive coupling. The control portion is configured so that an electric current extracts charge carriers from the electrically floating layer through Fowler-Nordheim tunneling to store a first logic value in the memory cell. The access portion is configured so that an electric current injects charge carriers in the electrically floating layer by injection of band-to-band tunneling-induced hot electrons to store a second logic value, respectively, in the memory cell.

Abstract translation: 非易失性存储器包括以行和列排列的单元。 每个存储单元包括访问部分和控制部分。 访问和控制部分共享导电材料的电浮置层，其限定了与访问部分的第一电容耦合和与控制部分的第二电容耦合。 第一电容耦合限定了低于由第二电容耦合限定的第二容量的第一容量。 控制部分被配置成使得电流通过Fowler-Nordheim隧道从电浮置层提取电荷载流子，以将第一逻辑值存储在存储器单元中。 访问部分被配置为使得电流通过注入频带隧穿感应的热电子而分别在存储单元中存储第二逻辑值来在电浮置层中注入电荷载流子。