发明申请
- 专利标题： SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 硅碳化硅半导体器件及其制造方法
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申请号： US14415752申请日： 2013-08-06
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公开(公告)号： US20150236127A1公开(公告)日： 2015-08-20
- 发明人: Shinichiro Miyahara , Toshimasa Yamamoto , Jun Morimoto , Narumasa Soejima , Yukihiko Watanabe
- 申请人： Jun MORIMOTO , DENSO CORPORATION
- 申请人地址： JP Toyota-shi, Aichi-ken JP Kariya-city, Aichi-pref.
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- 当前专利权人地址： JP Toyota-shi, Aichi-ken JP Kariya-city, Aichi-pref.
- 优先权： JP2012-174948 20120807; JP2013-156393 20130729
- 国际申请： PCT/JP2013/004735 WO 20130806
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78 ; H01L29/423 ; H01L29/10 ; H01L21/04 ; H01L21/28 ; H01L29/04 ; H01L29/16 ; H01L21/306
摘要：
In a method of manufacturing a silicon carbide semiconductor device including a vertical switching element having a trench gate structure, with the use of a substrate having an off angle with respect to a (0001) plane or a (000-1) plane, a trench is formed from a surface of a source region to a depth reaching a drift layer through a base region so that a side wall surface of the trench faces a (11-20) plane or a (1-100) plane, and a gate oxide film is formed without performing sacrificial oxidation after formation of the trench.
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